中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77305-077305.doi: 10.1088/1674-1056/22/7/077305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells

王建霞, 杨少延, 王俊, 刘贵鹏, 李志伟, 李辉杰, 金东东, 刘祥林, 朱勤生, 王占国   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2013-01-16 修回日期:2013-02-27 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 11275228, 60976008, 61006004, 61076001, and 10979507), the National Basic Research Program of China (Grant No. A000091109-05), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells

Wang Jian-Xia (王建霞), Yang Shao-Yan (杨少延), Wang Jun (王俊), Liu Gui-Peng (刘贵鹏), Li Zhi-Wei (李志伟), Li Hui-Jie (李辉杰), Jin Dong-Dong (金东东), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国)   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2013-01-16 Revised:2013-02-27 Online:2013-06-01 Published:2013-06-01
  • Contact: Yang Shao-Yan, Wang Jian-Xia E-mail:sh-yyang@semi.ac.cn; jxwang2009@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 11275228, 60976008, 61006004, 61076001, and 10979507), the National Basic Research Program of China (Grant No. A000091109-05), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

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摘要： The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

关键词: AlGaN/GaN quantum wells, surface roughness scattering, polarization fields, mobility

Abstract: The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

Key words: AlGaN/GaN quantum wells, surface roughness scattering, polarization fields, mobility

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.21.Fg (Quantum wells)