中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77305-077305.doi: 10.1088/1674-1056/22/7/077305
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
王建霞, 杨少延, 王俊, 刘贵鹏, 李志伟, 李辉杰, 金东东, 刘祥林, 朱勤生, 王占国
Wang Jian-Xia (王建霞), Yang Shao-Yan (杨少延), Wang Jun (王俊), Liu Gui-Peng (刘贵鹏), Li Zhi-Wei (李志伟), Li Hui-Jie (李辉杰), Jin Dong-Dong (金东东), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国)
摘要: The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)