A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications

doi:10.1088/1674-1056/abaee5

中国物理B ›› 2020, Vol. 29 ›› Issue (12): 127701-.doi: 10.1088/1674-1056/abaee5

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

收稿日期:2020-06-11 修回日期:2020-07-21 接受日期:2020-08-13 出版日期:2020-12-01 发布日期:2020-11-13

A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications

Yong Liu(刘勇), Qi Yu(于奇), and Jiang-Feng Du(杜江锋)†

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2020-06-11 Revised:2020-07-21 Accepted:2020-08-13 Online:2020-12-01 Published:2020-11-13
Contact: ^†Corresponding author. E-mail: jfdu@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61376078).

摘要/Abstract

Abstract: A novel p-GaN gate GaN high-electron-mobility transistor (HEMT) with an AlGaN buffer layer and hybrid dielectric zone (H-HEMT) is proposed. The hybrid dielectric zone is located in the buffer and composed of horizontal arranged HfO₂ zone and SiN_x zone. The proposed H-HEMT is numerically simulated and optimized by the Silvaco TCAD tools (ATLAS), and the DC, breakdown, C-V and switching properties of the proposed device are characterized. The breakdown voltage of the proposed HEMT is significantly improved with the introduction of the hybrid dielectric zone, which can effectively modulate the electric field distribution in the GaN channel and the buffer. High breakdown voltage of 1490 V, low specific on-state resistance of 0.45 mΩ cm² and high Baliga's figure of merit (FOM) of 5.3 GW/cm², small R_onQ_oss of 212 mΩ nC, high turn-on speed 627 V/ns and high turn-off speed 87 V/ns are obtained at the same time with the gate-to-drain distance L_gd of 6 μ m.

Key words: GaN HEMT, breakdown voltage, high-permittivity dielectric, low-permittivity dielectric

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors) 77.22.Ch (Permittivity (dielectric function))

. [J]. 中国物理B, 2020, 29(12): 127701-.

Yong Liu(刘勇), Qi Yu(于奇), and Jiang-Feng Du(杜江锋). A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications[J]. Chin. Phys. B, 2020, 29(12): 127701-.

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A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications

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