中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47103-047103.doi: 10.1088/1674-1056/26/4/047103

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electric current-induced giant electroresistance in La0.36Pr0.265Ca0.375MnO3 thin films

Yinghui Sun(孙颖慧), Yonggang Zhao(赵永刚), Rongming Wang(王荣明)   

  1. 1 Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
    2 Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China;
    3 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
  • 收稿日期:2016-12-27 修回日期:2017-01-22 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: Rongming Wang E-mail:rmwang@ustb.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 11604010), the Fundamental Research Funds for the Central Universities, China (Grant No. FRF-TP-15-097A1), and the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China (Grant No. KF201611).

Electric current-induced giant electroresistance in La0.36Pr0.265Ca0.375MnO3 thin films

Yinghui Sun(孙颖慧)1, Yonggang Zhao(赵永刚)2,3, Rongming Wang(王荣明)1   

  1. 1 Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
    2 Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China;
    3 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
  • Received:2016-12-27 Revised:2017-01-22 Online:2017-04-05 Published:2017-04-05
  • Contact: Rongming Wang E-mail:rmwang@ustb.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 11604010), the Fundamental Research Funds for the Central Universities, China (Grant No. FRF-TP-15-097A1), and the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China (Grant No. KF201611).

摘要:

The electroresistance (ER) of La0.36Pr0.265Ca0.375MnO3 (LPCMO) epitaxial thin film was studied under various dc currents. The current effect was compared for the unpatterned film and patterned microbridge with a width of 50 μm. The value of ER in the unpatterned LPCMO film could reach 0.54 under a 1-mA current, which is much higher than ER under 1 mA for the patterned weak phase-separated La0.67Ca0.33MnO3 and La0.85Sr0.15MnO3 microbridges with 50-μm width. More interestingly, for the patterned LPCMO microbridge, the maximum of ER can reach 0.6 under a small current of 100 μA. The results were explained by considering the coexistence of ferromagnetic metallic phase with the charge-ordered phase, and the variation of the phase separation with electric current.

关键词: manganites, electroresistance, phase separation, percolation

Abstract:

The electroresistance (ER) of La0.36Pr0.265Ca0.375MnO3 (LPCMO) epitaxial thin film was studied under various dc currents. The current effect was compared for the unpatterned film and patterned microbridge with a width of 50 μm. The value of ER in the unpatterned LPCMO film could reach 0.54 under a 1-mA current, which is much higher than ER under 1 mA for the patterned weak phase-separated La0.67Ca0.33MnO3 and La0.85Sr0.15MnO3 microbridges with 50-μm width. More interestingly, for the patterned LPCMO microbridge, the maximum of ER can reach 0.6 under a small current of 100 μA. The results were explained by considering the coexistence of ferromagnetic metallic phase with the charge-ordered phase, and the variation of the phase separation with electric current.

Key words: manganites, electroresistance, phase separation, percolation

中图分类号:  (Metal-insulator transitions and other electronic transitions)

  • 71.30.+h
64.75.St (Phase separation and segregation in thin films) 75.47.Lx (Magnetic oxides) 73.50.-h (Electronic transport phenomena in thin films)