中国物理B ›› 2017, Vol. 26 ›› Issue (9): 97502-097502.doi: 10.1088/1674-1056/26/9/097502

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Nonvolatile control of transport and magnetic properties in magnetoelectric heterostructures by electric field

Qian Li(李潜), Dun-Hui Wang(王敦辉), Qing-Qi Cao(曹庆琪), You-Wei Du(都有为)   

  1. National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nano Technology, Nanjing University, Nanjing 210093, China
  • 收稿日期:2017-04-26 修回日期:2017-05-15 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Dun-Hui Wang E-mail:wangdh@nju.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 51571108).

Nonvolatile control of transport and magnetic properties in magnetoelectric heterostructures by electric field

Qian Li(李潜), Dun-Hui Wang(王敦辉), Qing-Qi Cao(曹庆琪), You-Wei Du(都有为)   

  1. National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nano Technology, Nanjing University, Nanjing 210093, China
  • Received:2017-04-26 Revised:2017-05-15 Online:2017-09-05 Published:2017-09-05
  • Contact: Dun-Hui Wang E-mail:wangdh@nju.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 51571108).

摘要:

Nonvolatile manipulation of transport and magnetic properties by external electric field is significant for information storage. In this study, we investigate the electric field control of resistance and magnetization in a magnetoelectric heterostructure comprising an electronic phase-separated La0.325Pr0.3Ca0.375MnO3 (LPCMO) thin film and a ferroelectric (011)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) substrate. In a room-temperature poled sample, the metal-to-insulator transition temperature of an LPCMO film increases and the resistance decreases with variation in the effect of the remnant strain. Meanwhile, the increase in the magnetization of the sample is observed as well. This effect would be beneficial for the development of novel storage devices with low power consumption.

关键词: magnetoelectric heterostructure, electronic phase separation, perovskite manganite, magnetoelectric coupling

Abstract:

Nonvolatile manipulation of transport and magnetic properties by external electric field is significant for information storage. In this study, we investigate the electric field control of resistance and magnetization in a magnetoelectric heterostructure comprising an electronic phase-separated La0.325Pr0.3Ca0.375MnO3 (LPCMO) thin film and a ferroelectric (011)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) substrate. In a room-temperature poled sample, the metal-to-insulator transition temperature of an LPCMO film increases and the resistance decreases with variation in the effect of the remnant strain. Meanwhile, the increase in the magnetization of the sample is observed as well. This effect would be beneficial for the development of novel storage devices with low power consumption.

Key words: magnetoelectric heterostructure, electronic phase separation, perovskite manganite, magnetoelectric coupling

中图分类号:  (Colossal magnetoresistance)

  • 75.47.Gk
77.55.Nv (Multiferroic/magnetoelectric films) 71.30.+h (Metal-insulator transitions and other electronic transitions) 64.75.St (Phase separation and segregation in thin films)