中国物理B ›› 2017, Vol. 26 ›› Issue (11): 116803-116803.doi: 10.1088/1674-1056/26/11/116803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Improvement of sensitivity of graphene photodetectorby creating bandgap structure

Ni-Zhen Zhang(张倪侦), Meng-Ke He(何孟珂), Peng Yu(余鹏), Da-Hua Zhou(周大华)   

  1. 1. Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China;
    2. Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
  • 收稿日期:2017-06-18 修回日期:2017-07-29 出版日期:2017-11-05 发布日期:2017-11-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 51271210), the Chongqing Municipal Research Program of Basic Research and Frontier Technology, China (Grant No. cstc2015jcyjBX0039), and the Foundation for the Creative Research Groups of Higher Education of Chongqing Municipality, China (Grant No. CXTDX201601016).

Improvement of sensitivity of graphene photodetectorby creating bandgap structure

Ni-Zhen Zhang(张倪侦)1, Meng-Ke He(何孟珂)1, Peng Yu(余鹏)1, Da-Hua Zhou(周大华)2   

  1. 1. Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China;
    2. Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
  • Received:2017-06-18 Revised:2017-07-29 Online:2017-11-05 Published:2017-11-05
  • Contact: Peng Yu, Da-Hua Zhou E-mail:pengyu@cqnu.edu.cn;zhoudahua@cigit.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 51271210), the Chongqing Municipal Research Program of Basic Research and Frontier Technology, China (Grant No. cstc2015jcyjBX0039), and the Foundation for the Creative Research Groups of Higher Education of Chongqing Municipality, China (Grant No. CXTDX201601016).

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摘要：

Graphene has aroused large interest in optoelectronic applications because of its broad band absorption and ultrahigh electron mobility. However, the low absorption of 2.3% seriously limits its photoresponsivity and restricts the relevant applications. In this paper, a method to enhance the sensitivity of graphene photodetector is demonstrated by introducing electron trapping centers and creating a bandgap structure in graphene. The carrier lifetime obviously increases, and more carriers are collected by the electrodes. Compared with intrinsic graphene detector, the defective graphene photodetector possesses high photocurrent and low-driving-voltage, which gives rise to great potential applications in photodetector area.

关键词: graphene, photodetector, photocurrent, bandgap

Abstract:

Graphene has aroused large interest in optoelectronic applications because of its broad band absorption and ultrahigh electron mobility. However, the low absorption of 2.3% seriously limits its photoresponsivity and restricts the relevant applications. In this paper, a method to enhance the sensitivity of graphene photodetector is demonstrated by introducing electron trapping centers and creating a bandgap structure in graphene. The carrier lifetime obviously increases, and more carriers are collected by the electrodes. Compared with intrinsic graphene detector, the defective graphene photodetector possesses high photocurrent and low-driving-voltage, which gives rise to great potential applications in photodetector area.

Key words: graphene, photodetector, photocurrent, bandgap

中图分类号:  (Graphene films)

  • 68.65.Pq
78.67.Wj (Optical properties of graphene) 81.05.ue (Graphene)