Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO2 thin film

doi:10.1088/1674-1056/ab7742

摘要/Abstract

摘要： Mn:ZnSe/ZnS/L-Cys core-shell quantum dots (QDs) sensitized La-doped nano-TiO₂ thin film (QDSTF) was prepared. X-ray photoelectron spectroscopy (XPS), nanosecond transient photovoltaic (TPV), and steady state surface photovoltaic (SPV) technologies were used for probing the photoelectron behaviors in the Mn-doped QDSTF. The results revealed that the Mn-doped QDSTF had a p-type TPV characteristic. The bottom of the conduction band of the QDs as a sensitizer was just 0.86 eV above that of the La-doped nano-TiO₂ thin film, while the acceptor level of the doped Mn²⁺ ions was located at about 0.39 eV below and near the bottom of the conduction band of the QDs. The intensity of the SPV response of the Mn-doped QDSTF at a specific wavelength was ～2.1 times higher than that of the undoped QDSTF. The region of the SPV response of the Mn-doped QDSTF was extended by 191 nm to almost the whole visible region as compared with the undoped QDSTF one. And the region of the TPV response of the Mn-doped QDSTF was also obviously wider than that of the undoped QDSTF. These PV characteristics of the Mn-doped QDSTF may be due to the prolonged lifetime and extended diffusion length of photogenerated free charge carriers injected into the sensitized La-doped nano-TiO₂ thin film.

关键词: doping effects, ZnSe quantum dots sensitization, nano-TiO₂ thin film, photoelectron spectroscopy

Abstract: Mn:ZnSe/ZnS/L-Cys core-shell quantum dots (QDs) sensitized La-doped nano-TiO₂ thin film (QDSTF) was prepared. X-ray photoelectron spectroscopy (XPS), nanosecond transient photovoltaic (TPV), and steady state surface photovoltaic (SPV) technologies were used for probing the photoelectron behaviors in the Mn-doped QDSTF. The results revealed that the Mn-doped QDSTF had a p-type TPV characteristic. The bottom of the conduction band of the QDs as a sensitizer was just 0.86 eV above that of the La-doped nano-TiO₂ thin film, while the acceptor level of the doped Mn²⁺ ions was located at about 0.39 eV below and near the bottom of the conduction band of the QDs. The intensity of the SPV response of the Mn-doped QDSTF at a specific wavelength was ～2.1 times higher than that of the undoped QDSTF. The region of the SPV response of the Mn-doped QDSTF was extended by 191 nm to almost the whole visible region as compared with the undoped QDSTF one. And the region of the TPV response of the Mn-doped QDSTF was also obviously wider than that of the undoped QDSTF. These PV characteristics of the Mn-doped QDSTF may be due to the prolonged lifetime and extended diffusion length of photogenerated free charge carriers injected into the sensitized La-doped nano-TiO₂ thin film.

Key words: doping effects, ZnSe quantum dots sensitization, nano-TiO₂ thin film, photoelectron spectroscopy

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

73.63.Kv (Quantum dots) 82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)) 74.78.-w (Superconducting films and low-dimensional structures)

李绍, 李刚, 杨丽爽, 李葵英. Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO₂ thin film[J]. 中国物理B, 2020, 29(4): 46104-046104.

Shao Li(李绍), Gang Li(李刚), Li-Shuang Yang(杨丽爽), Kui-Ying Li(李葵英). Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO₂ thin film[J]. Chin. Phys. B, 2020, 29(4): 46104-046104.

参考文献 61

[1]	Kovtun O, Tomlinson I D, Bailey D M, Thal L B, Ross E J, Harris L, Frankland M P, Ferguson R S, Glaser Z, Greer J and Rosenthal S J 2018 Chem. Phys. Lett. 706 741 doi: 10.1016/j.cplett.2018.06.019
[2]	Delikanli S, Guzelturk B, Hernández-Martínez P L, Erdem T, Kelestemur Y, Olutas M, Akgul M Z and Demir H V 2015 Adv. Funct. Mater. 25 4282 doi: 10.1002/adfm.201500403
[3]	Chistyakov A A, Zvaigzne M A, Nikitenko V R, Tameev A R, Martynov I L and Prezhdo O V 2017 J. Phys. Chem. Lett. 8 4129 doi: 10.1021/acs.jpclett.7b00671
[4]	Chaguetmi S, Mammeri F, Nowak S and Decorse P 2013 RSC Adv. 3 2572 doi: 10.1039/c2ra21684a
[5]	Chen O, Zhao J, Chauhan V P, Cui J, Wong C, Harris D K, Wei H, Han H S, Fukumura D, Jain R K and Bawendi M G 2013 Nat. Mater. 12 445 doi: 10.1038/nmat3539
[6]	Wilson K C, Manikandan E and Ahamed M B 2014 Mater. Lett. 120 295 doi: 10.1016/j.matlet.2014.01.126
[7]	Milekhin A G, Sveshnikova L L, Repinsky S M, Gutakovsky A K and Friedrich M 2002 Thin Solid Films 422 200 doi: 10.1016/S0040-6090(02)00991-4
[8]	Lohar G M, Shinde S K, Rath M C and Fulari V J 2014 Mater. Sci. Semicond. Process. 26 548 doi: 10.1016/j.mssp.2014.05.047
[9]	Kennedy J, Murmu P P, Leveneur J, Markwitz A and Futter J 2016 Appl. Surf. Sci. 367 52 doi: 10.1016/j.apsusc.2016.01.160
[10]	Murray C B, Norris D J and Bawendi M G 1993 J. Am. Chem. Soc. 115 8706 doi: 10.1021/ja00072a025
[11]	Sarma D D, Nag A, Santra P K, Kumar A, Sapra S and Mahadevan P 2010 J. Phys. Chem. Lett. 1 2149 doi: 10.1021/jz100698m
[12]	Yu W W, Qu L H, Guo W Z and Peng X G 2003 Chem. Mater. 15 2854 doi: 10.1021/cm034081k
[13]	Hughes B K, Beard M C, Nozik A J and Johnson J C 2011 J. Phys. Chem. Lett. 2 1282 doi: 10.1021/jz200166y
[14]	Speranskaya E S, Beloglazova N V, Lenain P, Saeger S D, Wang Z, Zhang S, Hens Z, Knopp D, Niessner R, Potapkin D V and Goryacheva I Y 2014 Biosens. Bioelectron. 53 225 doi: 10.1016/j.bios.2013.09.045
[15]	Yang Y X, Zheng Y, Cao W R, Titov A, Hyvonen J, Manders J R, Xue J G, Holloway P H and Qian L 2015 Nat. Photon. 9 259 doi: 10.1038/nphoton.2015.36
[16]	Meinardi F, McDaniel H, Carulli F, Colombo A, Velizhanin K A, Makarov N S, Simonutti R, Klimov V I and Brovelli S 2015 Nat. Nanotechnol. 10 878 doi: 10.1038/nnano.2015.178
[17]	Shirasaki Y, Supran G J, Bawendi M G and Bulović V 2013 Nat. Photonics. 7 13 doi: 10.1038/nphoton.2012.328
[18]	Yan J F and Saunders B R 2014 RSC Adv. 4 43286 doi: 10.1039/C4RA07064J
[19]	Zhu G, Pan L K, Xu T and Sun Z 2011 ACS Appl. Mater. Inter. 3 3146 doi: 10.1021/am200648b
[20]	Song X H, Wang M Q, Shi Y H, Deng J P, Yang Z and Yao X 2012 Electrochim. Acta 81 260 doi: 10.1016/j.electacta.2012.07.015
[21]	Hossain M A, Jennings J R, Shen C, Pan J H, Koh Z Y, Mathews N and Wang Q 2012 J. Mater. Chem. 22 16235 doi: 10.1039/c2jm33211f
[22]	Lee H J, Wang M K, Chen P, Gamelin D R, Zakeeruddin S M, Gratzel M and Nazeeruddin M K 2009 Nano. Lett. 9 4221 doi: 10.1021/nl902438d
[23]	Lee Y L, Huang B M and Chien H T 2008 Chem. Mater. 20 6903 doi: 10.1021/cm802254u
[24]	Tian J J, Gao R, Zhang Q F, Li Y W, Lan J, Qu X H and Cao G Z 2012 J. Phys. Chem. C 116 18655 doi: 10.1021/jp3058838
[25]	Lin S C, Lee Y L, Chang C H, Shen Y J and Yang Y M 2007 Appl. Phys. Lett. 90 143517 doi: 10.1063/1.2721373
[26]	Li G S, Zhang D Q and Yu J C 2009 Environ. Sci. Technol. 43 7079 doi: 10.1021/es9011993
[27]	Huang S Q, Zhang Q X, Huang X M, Guo X Z, Deng M H, Li D M, Luo Y H, Shen Q, Toyoda T and Meng Q B 2010 Nano Technol. 21 375201
[28]	Li K Y and Xue Z J 2014 Mater. Chem. Phys. 148 253 doi: 10.1016/j.matchemphys.2014.07.042
[29]	Ren L, Li K Y, Cui J Y and Shen T D 2018 J. Mater Sci: Mater. Electron. 29 4478 doi: 10.1007/s10854-017-8395-z
[30]	Li K Y, Shan Q S, Zhu R P, Yin H, Lin Y Y and Wang L Q 2015 Nanoscale 7 7906 doi: 10.1039/C5NR00494B
[31]	Cui J Y, Li K Y, Ren L, Zhao J and Shen T D 2016 J. Appl. Phys. 120 184302 doi: 10.1063/1.4967227
[32]	Zhang Y, Xie T F, Jiang T F, Wei X, Pang S, Wang X and Wang D J 2009 Nanotechnology 20 155707 doi: 10.1088/0957-4484/20/15/155707
[33]	Pernik D R, Turdy K, Radich J G and Kamat P V 2011 J. Phys. Chem. C. 115 13511 doi: 10.1021/jp203055d
[34]	Mocatta D, Cohen G, Schattner J, Millo O, Rabani E and Banin U 2011 Science 332 77 doi: 10.1126/science.1196321
[35]	Antonelli D M and Ying J Y 1995 Angew. Chem. Int. Ed. Engl. 34 2014 doi: 10.1002/anie.199520141
[36]	Jing L Q, Sun X J, Xin B F, Wang B Q, Cai W M and Fu H G 2004 J. Solid. State. Chem. 177 3375 doi: 10.1016/j.jssc.2004.05.064
[37]	Legrand-Buscema C and Bach C M S 2002 Thin Solid Films 418 79 doi: 10.1016/S0040-6090(02)00714-9
[38]	Guijarro N, Shen Q, Gimenez S, Mora-Sero I, Bisquert J, Lana-Villarreal T, Toyoda T and Gomez R 2010 J. Phys. Chem. C. 114 22352 doi: 10.1021/jp108499h
[39]	Wei X, Xie T F, Xu D, Zhao Q D, Pang S and Wang D J 2008 Nanotechnology 19 275707 doi: 10.1088/0957-4484/19/27/275707
[40]	Nakade S, Saito Y, Kubo W, Kanzaki T, Kitamura T, Wada Y and Yanagida S 2004 J. Phys. Chem. B 108 1628 doi: 10.1021/jp036786f
[41]	Kronik L and Shapira Y 1999 Surf. Sci. Rep. 37 1 doi: 10.1016/S0167-5729(99)00002-3
[42]	Ren P G, Yan D X, Ji X, Chen T and Li Z M 2011 Nanotechnology 22 055705 doi: 10.1088/0957-4484/22/5/055705
[43]	Stankovich S, Dikin D A, Piner R D, Kohlhaas K A, Kleinhammes A, Jia Y Y, Wu Y, Nguyen S B T and Ruoff R S 2007 Carbon 45 1558 doi: 10.1016/j.carbon.2007.02.034
[44]	Park S J, An J H, Piner R D, Jung I, Yang D X, Velamakanni A, Nguyen S B T and Ruoff R S 2008 Chem. Mater. 20 6592 doi: 10.1021/cm801932u
[45]	Swart H C, Greeff A P, Holloway P H and Berning G L P 1999 App. Surf. Sci. 140 63 doi: 10.1016/S0169-4332(98)00356-0
[46]	Shenasa M, Sainkar S and Lichtman D 1986 J. Elecron. Spectrosc. 40 329 doi: 10.1016/0368-2048(86)80043-3
[47]	Mandale A B, Badrinarayanan S, Date S K and Sinha A P B 1984 J. Elecron. Spectrosc. 33 61 doi: 10.1016/0368-2048(84)80006-7
[48]	Myeongcheol K and Osten H J 1997 Appl. Phys. Lett. 70 2702 doi: 10.1063/1.118998
[49]	Ludeke R, Ley L and Ploog K 1978 Solid State Commun. 28 57 doi: 10.1016/0038-1098(78)90327-7
[50]	Li K Y, Ren L and Shen T D 2018 Chin. Phys. B 27 067305 doi: 10.1088/1674-1056/27/6/067305
[51]	Li K Y, Wei S L and Yang W Y 2011 J. Phys. Chem. Solids 72 643 doi: 10.1016/j.jpcs.2011.02.010
[52]	Balaji S, Djaoued Y and Robichaud J 2006 J. Raman Spectrosc. 37 1416 doi: 10.1002/jrs.1566
[53]	Ma W, Lu Z and Zhang M 1998 Appl. Phys. A 66 621
[54]	Ohsaka T 1980 J. Phys. Soc. Jap. 48 1661 doi: 10.1143/JPSJ.48.1661
[55]	Jiang Y, Meng X M, Yiu W C, Liu J, Ding J X, Lee C S and Lee S T 2004 J. Phys. Chem. B 108 2784 doi: 10.1021/jp035595+
[56]	Shao Y, Cao C S, Chen S L, He M, Fang J L, Chen J, Li X F and Li D Z 2015 Appl. Catal. B-Environ. 179 344 doi: 10.1016/j.apcatb.2015.05.023
[57]	Xu X Q, Giménez S, Seró I M, Abate A, Bisquert J and Xu G 2010 Mater. Chem. Phys. 124 709 doi: 10.1016/j.matchemphys.2010.07.041
[58]	Winter J O, Gomez N, Gatzert S, Schmidt C E and Korgel B A 2005 Colloids Surf. A: Physicochem. Eng. Aspects. 254 147 doi: 10.1016/j.colsurfa.2004.11.024
[59]	Mahrov B, Boschloo G, Hagfeldt A, Dloczik L and Dittrich Th 2004 Appl. Phys. Lett. 84 5455 doi: 10.1063/1.1767961
[60]	Duzhko V, Koch F and Dittrich Th 2002 J. Appl. Phys. 91 9432 doi: 10.1063/1.1471383
[61]	Lifshitz E, Kaplan A, Ehrenfreund E and Meissner D 1998 J. Phys. Chem. B 102 967 doi: 10.1021/jp972505q

Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO₂ thin film

Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO₂ thin film

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 61

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jia-Li Chen(陈佳丽), Pei-Yu Ji(季佩宇), Cheng-Gang Jin(金成刚), Lan-Jian Zhuge(诸葛兰剑), and Xue-Mei Wu(吴雪梅). Synthesis of SiC/graphene nanosheet composites by helicon wave plasma[J]. 中国物理B, 2021, 30(7): 75201-075201.
[2]	饶畅, 费泽元, 陈伟驱, 陈梓敏, 卢星, 王钢, 王新中, 梁军, 裴艳丽. Band alignment of p-type oxide/ε-Ga₂O₃ heterojunctions investigated by x-ray photoelectron spectroscopy[J]. 中国物理B, 2020, 29(9): 97303-097303.
[3]	赵妍, 尹泓卜, 符亚军, 王雪敏, 吴卫东. Energy band alignment at Cu₂O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy[J]. 中国物理B, 2019, 28(8): 87301-087301.
[4]	杜莹莹, 林德渠, 陈光华, 白新源, 汪隆喜, 吴蕊, 王嘉鸥, 钱海杰, 李宏年. Electronic states and molecular orientation of ITIC film[J]. 中国物理B, 2018, 27(8): 88801-088801.
[5]	洪彦鹏, 王欣欣, 曲国良, 厉承剑, 薛红霞, 刘科践, 李永春, 熊昌民, 窦瑞芬, 何林, 聂家财. Conductivity and band alignment of LaCrO₃/SrTiO₃ (111) heterostructure[J]. 中国物理B, 2018, 27(4): 47301-047301.
[6]	胡静, 宋秀能, 王胜雨, 林娟, 张俊荣, 马勇. Landscape of s-triazine molecule on Si(100) by a theoretical x-ray photoelectron spectroscopy and x-ray absorption near-edge structure spectra study[J]. 中国物理B, 2018, 27(11): 113101-113101.
[7]	梁锋, 陈平, 赵德刚, 江德生, 赵志娟, 刘宗顺, 朱建军, 杨静, 刘炜, 何晓光, 李晓静, 李翔, 刘双韬, 杨辉, 张立群, 刘建平, 张源涛, 杜国同. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC[J]. 中国物理B, 2016, 25(5): 57703-057703.
[8]	彭英姿, 宋扬, 解晓强, 李源, 钱正洪, 白茹. Characterization of atomic-layer MoS₂ synthesized using a hot filament chemical vapor deposition method[J]. 中国物理B, 2016, 25(5): 58104-058104.
[9]	梁晨亮, 刘卫丽, 李沙沙, 孔慧, 张泽芳, 宋志棠. A nano-scale mirror-like surface of Ti-6Al-4V attained by chemical mechanical polishing[J]. 中国物理B, 2016, 25(5): 58301-058301.
[10]	刘静, 王嘉鸥, 伊福廷, 吴蕊, 张念, 奎热西. Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy[J]. , 2014, 23(9): 96101-096101.
[11]	Z. A. Umar, R. S. Rawat, R. Ahmad, A. K. Kumar, Y. Wang, T. Hussain, Z. Chen, L. Shen, Z. Zhang. Mechanical properties of Al/a-C nanocomposite thin films synthesized using a plasma focus device[J]. 中国物理B, 2014, 23(2): 25204-025204.
[12]	陈峰, 吴文彬, 李舜怡, Andreas Klein. Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy[J]. 中国物理B, 2014, 23(1): 17702-017702.
[13]	王晓晖, 高频, 王洪刚, 李飙, 常本康. Influence of wet chemical cleaning on quantum efficiency of GaN photocathode[J]. 中国物理B, 2013, 22(2): 27901-027901.
[14]	R. A. Rehman, 蔡亦良, 张寒洁, 吴珂, 窦卫东, 李海洋, 何丕模, 鲍世宁. A shortcut for determining growth mode[J]. 中国物理B, 2013, 22(10): 107202-107202.
[15]	樊继斌, 刘红侠, 高博, 马飞, 卓青青, 郝跃. Influence of different oxidants on band alignment of HfO₂ films deposited by atomic layer deposition[J]. 中国物理B, 2012, 21(8): 87702-087702.