中国物理B ›› 2011, Vol. 20 ›› Issue (1): 17804-017804.doi: 10.1088/1674-1056/20/1/017804

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

方浩, 龙浩, 桑立雯, 齐胜利, 熊畅, 于彤军, 杨志坚, 张国义   

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2010-01-03 修回日期:2010-02-03 出版日期:2011-01-15 发布日期:2011-01-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60776041, 60976009 and U0834001), and the National Basic Research program of China (Grant No. 2007CB307004).

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

Fang Hao(方浩),Long Hao(龙浩),Sang Li-Wen(桑立雯), Qi Sheng-Li(齐胜利),Xiong Chang(熊畅),Yu Tong-Jun(于彤军)†, Yang Zhi-Jian(杨志坚),and Zhang Guo-Yi(张国义)   

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2010-01-03 Revised:2010-02-03 Online:2011-01-15 Published:2011-01-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60776041, 60976009 and U0834001), and the National Basic Research program of China (Grant No. 2007CB307004).

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摘要： We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.

Abstract: We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.

Key words: metal-organic chemical deposition, III-nitrides, nonpolar, light emitting diodes

中图分类号: 

  • 78.70.Ch
78.55.Cr (III-V semiconductors) 78.60.Fi (Electroluminescence) 78.67.De (Quantum wells)