中国物理B ›› 2016, Vol. 25 ›› Issue (3): 37307-037307.doi: 10.1088/1674-1056/25/3/037307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

Lie-Feng Feng(冯列峰), Kun Zhao(赵昆), Hai-Tao Dai(戴海涛), Shu-Guo Wang(王树国), Xiao-Wei Sun(孙小卫)   

  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
  • 收稿日期:2015-09-09 修回日期:2015-11-11 出版日期:2016-03-05 发布日期:2016-03-05
  • 通讯作者: Lie-Feng Feng E-mail:fengliefeng@tju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204209 and 60876035) and the Natural Science Foundation of Tianjin City, China (Grant No. 13JCZDJC32800).

Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

Lie-Feng Feng(冯列峰), Kun Zhao(赵昆), Hai-Tao Dai(戴海涛), Shu-Guo Wang(王树国), Xiao-Wei Sun(孙小卫)   

  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
  • Received:2015-09-09 Revised:2015-11-11 Online:2016-03-05 Published:2016-03-05
  • Contact: Lie-Feng Feng E-mail:fengliefeng@tju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204209 and 60876035) and the Natural Science Foundation of Tianjin City, China (Grant No. 13JCZDJC32800).

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摘要： Negative capacitance (NC) in dye-sensitized solar cells (DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carrier's transport layer is explored theoretically in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current (AC) recombination resistance (Rrac) and the direct current (DC) recombination resistance (Rrdc), which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.

关键词: dye-sensitized solar-cells (DSCs), negative capacitance (NC), small-signal perturbation, carrier's transport

Abstract: Negative capacitance (NC) in dye-sensitized solar cells (DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carrier's transport layer is explored theoretically in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current (AC) recombination resistance (Rrac) and the direct current (DC) recombination resistance (Rrdc), which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.

Key words: dye-sensitized solar-cells (DSCs), negative capacitance (NC), small-signal perturbation, carrier's transport

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
85.30.De (Semiconductor-device characterization, design, and modeling) 88.40.fc (Modeling and analysis) 88.40.H- (Solar cells (photovoltaics))