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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation[J]. 中国物理B, 2023, 32(1): 16701-016701. |
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Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Ion migration in metal halide perovskite QLEDs and its inhibition[J]. 中国物理B, 2023, 32(1): 18507-018507. |
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Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response[J]. 中国物理B, 2022, 31(8): 88503-088503. |
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Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD[J]. 中国物理B, 2022, 31(3): 38103-038103. |
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Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙). Large-area fabrication: The next target of perovskite light-emitting diodes[J]. 中国物理B, 2021, 30(8): 88502-088502. |
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Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film[J]. 中国物理B, 2021, 30(5): 57301-057301. |
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Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽). Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome[J]. 中国物理B, 2021, 30(12): 123302-123302. |
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Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮). Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si[J]. 中国物理B, 2021, 30(11): 118101-118101. |
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徐庆君, 张士英, 刘斌, 李振华, 陶涛, 谢自力, 修向前, 陈敦军, 陈鹏, 韩平, 王科, 张荣, 郑有炓. Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys[J]. 中国物理B, 2020, 29(5): 58103-058103. |
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Byung-Ryool Hyun, Mikita Marus, 钟华英, 李德鹏, 刘皓宸, 谢阅, Weon-kyu Koh, 徐冰, 刘言军, 孙小卫. Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals[J]. 中国物理B, 2020, 29(1): 18503-018503. |
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王琦, 袁国栋, 刘文强, 赵帅, 张璐, 刘志强, 王军喜, 李晋闽. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. 中国物理B, 2019, 28(8): 87802-087802. |
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王燕丽, 李培咸, 许晟瑞, 周小伟, 张心禹, 姜思宇, 黄茹雪, 刘洋, 訾亚丽, 吴金星, 郝跃. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes[J]. 中国物理B, 2019, 28(3): 38502-038502. |
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吴倩倩, 曹璠, 孔令媚, 杨绪勇. InP quantum dots-based electroluminescent devices[J]. 中国物理B, 2019, 28(11): 118103-118103. |
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李长富, 时凯居, 徐明升, 徐现刚, 冀子武. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. 中国物理B, 2019, 28(10): 107803-107803. |