中国物理B ›› 2016, Vol. 25 ›› Issue (9): 98402-098402.doi: 10.1088/1674-1056/25/9/098402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In, Ga)Se2 thin-film solar cells

Ming Lu(鲁明), Jing Xu(徐晶), Jian-Wei Huang(黄建微)   

  1. 1. Department of Physics, Yantai University, Yantai 264005, China;
    2. National Institute of Metrology, Beijing 100013, China
  • 收稿日期:2016-04-20 修回日期:2016-05-11 出版日期:2016-09-05 发布日期:2016-09-05
  • 通讯作者: Ming Lu E-mail:lum@ytu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11547151).

Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In, Ga)Se2 thin-film solar cells

Ming Lu(鲁明)1, Jing Xu(徐晶)1, Jian-Wei Huang(黄建微)2   

  1. 1. Department of Physics, Yantai University, Yantai 264005, China;
    2. National Institute of Metrology, Beijing 100013, China
  • Received:2016-04-20 Revised:2016-05-11 Online:2016-09-05 Published:2016-09-05
  • Contact: Ming Lu E-mail:lum@ytu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11547151).

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摘要： The lowest energies which make Cu, In, Ga, and Se atoms composing Cu(In, Ga)Se2 (CIGS) material displaced from their lattice sites are evaluated, respectively. The non-ionizing energy loss (NIEL) for electron in CIGS material is calculated analytically using the Mott differential cross section. The relation of the introduction rate (k) of the recombination centers to NIEL is modified, then the values of k at different electron energies are calculated. Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers. The validity of the modeling approach is verified by comparison with the experimental data.

关键词: Cu(In, Ga)Se2 solar cells, non-ionizing energy loss, electron irradiation

Abstract: The lowest energies which make Cu, In, Ga, and Se atoms composing Cu(In, Ga)Se2 (CIGS) material displaced from their lattice sites are evaluated, respectively. The non-ionizing energy loss (NIEL) for electron in CIGS material is calculated analytically using the Mott differential cross section. The relation of the introduction rate (k) of the recombination centers to NIEL is modified, then the values of k at different electron energies are calculated. Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers. The validity of the modeling approach is verified by comparison with the experimental data.

Key words: Cu(In, Ga)Se2 solar cells, non-ionizing energy loss, electron irradiation

中图分类号:  (Photoelectric conversion)

  • 84.60.Jt
61.82.Fk (Semiconductors) 61.80.Jh (Ion radiation effects)