中国物理B ›› 2015, Vol. 24 ›› Issue (8): 88105-088105.doi: 10.1088/1674-1056/24/8/088105
所属专题： TOPICAL REVIEW — Silicene
• TOPICAL REVIEW—Silicene • 上一篇 下一篇
Silicene transistors–A review
屈贺如歌a c d, 王洋洋a e, 吕劲a b
- a State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China;
b Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;
c State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
d School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
e Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Silicene transistors–A review
Quhe Ru-Ge (屈贺如歌)a c d, Wang Yang-Yang (王洋洋)a e, Lü Jin (吕劲)a b
- a State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China;
b Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;
c State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
d School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
e Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
摘要：
Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory, silicene has been considered as an option for post-silicon electronics, as an alternative to graphene and other two-dimensional materials. Despite its theoretical high carrier mobility, the zero band gap characteristic makes pure silicene impossible to use directly as a field effect transistor (FET) operating at room temperature. Here, we first review the theoretical approaches to open a band gap in silicene without diminishing its excellent electronic properties and the corresponding simulations of silicene transistors based on an opened band gap. An all-metallic silicene FET without an opened band gap is also introduced. The two chief obstacles for realization of a silicene transistor are silicene's strong interaction with a metal template and its instability in air. In the final part, we briefly describe a recent experimental advance in fabrication of a proof-of-concept silicene device with Dirac ambipolar charge transport resembling a graphene FET, fabricated via a growth-transfer technique.
中图分类号: (Nanoscale materials and structures: fabrication and characterization)
- 81.07.-b