中国物理B ›› 2015, Vol. 24 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/24/8/087305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

黄杰a, 黎明b, 赵倩c, 顾雯雯a, 刘纪美b   

  1. a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China;
    c School of Physical Science and Technology, Southwest University, Chongqing 400715, China
  • 收稿日期:2014-12-29 修回日期:2015-03-29 出版日期:2015-08-05 发布日期:2015-08-05
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401373), the Fundamental Research Funds for Central University, China (Grant Nos. XDJK2013B004 and 2362014XK13), and the Chongqing Natural Science Foundation, China (Grant No. cstc2014jcyjA40038).

Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Huang Jie (黄杰)a, Li Ming (黎明)b, Zhao Qian (赵倩)c, Gu Wen-Wen (顾雯雯)a, Lau Kei-May (刘纪美)b   

  1. a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China;
    c School of Physical Science and Technology, Southwest University, Chongqing 400715, China
  • Received:2014-12-29 Revised:2015-03-29 Online:2015-08-05 Published:2015-08-05
  • Contact: Huang Jie, Li Ming E-mail:jiehuang@swu.edu.cn;eeliming@sina.com
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401373), the Fundamental Research Funds for Central University, China (Grant Nos. XDJK2013B004 and 2362014XK13), and the Chongqing Natural Science Foundation, China (Grant No. cstc2014jcyjA40038).

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摘要： In this work, a hetero-epitaxial Al0.49In0.51As/Ga0.47In0.53As metamorphic high electron mobility transistor (mHEMT) grown by metal–organic chemical vapor deposition (MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/AlAs period multiple quantum well (MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the two-dimensional electron gas (2DEG) is larger than 7800 cm2/V·s, with an average sheet carrier density of 4.6×1012 cm-2. Two-stage electron beam (EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm mHEMT device on Si substrate. A maximum transconductance Gm of up to 854 mS/mm is achieved, and is comparable to that of mHEMT technology on GaAs substrate with the same dimension. The fT and fmax are 135 GHz and 120 GHz, respectively.

关键词: AlInAs/GaInAs, silicon, metamorphic high electron mobility transistor (mHEMT), metal-organic chemical vapor deposition (MOCVD), multiple quantum well (MQW)

Abstract: In this work, a hetero-epitaxial Al0.49In0.51As/Ga0.47In0.53As metamorphic high electron mobility transistor (mHEMT) grown by metal–organic chemical vapor deposition (MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/AlAs period multiple quantum well (MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the two-dimensional electron gas (2DEG) is larger than 7800 cm2/V·s, with an average sheet carrier density of 4.6×1012 cm-2. Two-stage electron beam (EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm mHEMT device on Si substrate. A maximum transconductance Gm of up to 854 mS/mm is achieved, and is comparable to that of mHEMT technology on GaAs substrate with the same dimension. The fT and fmax are 135 GHz and 120 GHz, respectively.

Key words: AlInAs/GaInAs, silicon, metamorphic high electron mobility transistor (mHEMT), metal-organic chemical vapor deposition (MOCVD), multiple quantum well (MQW)

中图分类号:  (III-V semiconductors)

  • 73.61.Ey