中国物理B ›› 2015, Vol. 24 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/24/8/087305
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
黄杰a, 黎明b, 赵倩c, 顾雯雯a, 刘纪美b
Huang Jie (黄杰)a, Li Ming (黎明)b, Zhao Qian (赵倩)c, Gu Wen-Wen (顾雯雯)a, Lau Kei-May (刘纪美)b
摘要: In this work, a hetero-epitaxial Al0.49In0.51As/Ga0.47In0.53As metamorphic high electron mobility transistor (mHEMT) grown by metal–organic chemical vapor deposition (MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/AlAs period multiple quantum well (MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the two-dimensional electron gas (2DEG) is larger than 7800 cm2/V·s, with an average sheet carrier density of 4.6×1012 cm-2. Two-stage electron beam (EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm mHEMT device on Si substrate. A maximum transconductance Gm of up to 854 mS/mm is achieved, and is comparable to that of mHEMT technology on GaAs substrate with the same dimension. The fT and fmax are 135 GHz and 120 GHz, respectively.
中图分类号: (III-V semiconductors)