中国物理B ›› 2015, Vol. 24 ›› Issue (7): 78103-078103.doi: 10.1088/1674-1056/24/7/078103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Influence of Ag and Sn incorporation in In2S3 thin films

林灵燕, 俞金玲, 程树英, 陆培民   

  1. Institute of Micro/Nano Devices and Solar Cells, School of Physics & Information Engineering, Fuzhou University, Fuzhou 350108, China
  • 收稿日期:2015-01-05 修回日期:2015-01-30 出版日期:2015-07-05 发布日期:2015-07-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076063, 61340051, and 61306120) and the Natural Science Foundation of Fujian Province, China (Grant No. 2014J05073).

Influence of Ag and Sn incorporation in In2S3 thin films

Lin Ling-Yan (林灵燕), Yu Jin-Ling (俞金玲), Cheng Shu-Ying (程树英), Lu Pei-Min (陆培民)   

  1. Institute of Micro/Nano Devices and Solar Cells, School of Physics & Information Engineering, Fuzhou University, Fuzhou 350108, China
  • Received:2015-01-05 Revised:2015-01-30 Online:2015-07-05 Published:2015-07-05
  • Contact: Yu Jin-Ling, Cheng Shu-Ying E-mail:jlyu@semi.ac.cn;sycheng@fzu.du.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076063, 61340051, and 61306120) and the Natural Science Foundation of Fujian Province, China (Grant No. 2014J05073).

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摘要： Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping, while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.

关键词: In2S3 thin films, doping, thermal evaporation

Abstract: Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping, while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.

Key words: In2S3 thin films, doping, thermal evaporation

中图分类号:  (Other semiconductors)

  • 81.05.Hd
68.55.-a (Thin film structure and morphology) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))