Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy

doi:10.1088/1674-1056/24/7/078104

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 78104-078104.doi: 10.1088/1674-1056/24/7/078104

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Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy

张勇^a, 王业亮^{a b}, 阙炎德^a, 高鸿钧^{a b}

a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2015-03-12 修回日期:2015-03-24 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2013CBA01600 and 2011CB932700), the National Natural Science Foundation of China (Grant Nos. 61222112, 61390501 and 51325204), and Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy

Zhang Yong (张勇)^a, Wang Ye-Liang (王业亮)^{a b}, Que Yan-De (阙炎德)^a, Gao Hong-Jun (高鸿钧)^{a b}

a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

Received:2015-03-12 Revised:2015-03-24 Online:2015-07-05 Published:2015-07-05
Contact: Wang Ye-Liang E-mail:ylwang@iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2013CBA01600 and 2011CB932700), the National Natural Science Foundation of China (Grant Nos. 61222112, 61390501 and 51325204), and Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

摘要/Abstract

摘要：

An efficient method based on atomic force microscopy (AFM) has been developed to characterize silicon intercalated graphene grown on single crystalline Ir(111) thin films. By combining analyses of the phase image, force curves, and friction–force mapping, acquired by AFM, the locations and coverages of graphene and silicon oxide can be well distinguished. We can also demonstrate that silicon atoms have been successfully intercalated between graphene and the substrate. Our method gives an efficient and simple way to characterize graphene samples with interacted atoms and is very helpful for future applications of graphene-based devices in the modern microelectronic industry, where AFM is already widely used.

关键词: graphene, silicon, intercalation, atomic force microscopy

Abstract:

Key words: graphene, silicon, intercalation, atomic force microscopy

中图分类号: (Graphene)

81.05.ue

87.64.Dz (Scanning tunneling and atomic force microscopy) 68.55.Nq (Composition and phase identification)

张勇, 王业亮, 阙炎德, 高鸿钧. Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy[J]. 中国物理B, 2015, 24(7): 78104-078104.

Zhang Yong (张勇), Wang Ye-Liang (王业亮), Que Yan-De (阙炎德), Gao Hong-Jun (高鸿钧). Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy[J]. Chin. Phys. B, 2015, 24(7): 78104-078104.

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Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy

Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy

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