中国物理B ›› 2015, Vol. 24 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/24/7/078102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD

黄杰a, 黎明b, 刘纪美c   

  1. a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b Southwest China Research Institute of Electronic Equipment, Chengdu 610036, China;
    c Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • 收稿日期:2014-10-08 修回日期:2014-11-06 出版日期:2015-07-05 发布日期:2015-07-05
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation, China (Grant No. 61401373), the Fundamental Research Funds for Central University, China (Grant No. XDJK2013B004 and 2362014XK13), and the Research Fund for the Doctoral Program of Southwest University, China (Grant No. SWU111030).

Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD

Huang Jie (黄杰)a, Li Ming (黎明)b, Lau Kei-May (刘纪美)c   

  1. a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b Southwest China Research Institute of Electronic Equipment, Chengdu 610036, China;
    c Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • Received:2014-10-08 Revised:2014-11-06 Online:2015-07-05 Published:2015-07-05
  • Contact: Huang Jie, Li Ming E-mail:jiehuang@swu.edu.cn;eeliming@sina.com
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation, China (Grant No. 61401373), the Fundamental Research Funds for Central University, China (Grant No. XDJK2013B004 and 2362014XK13), and the Research Fund for the Doctoral Program of Southwest University, China (Grant No. SWU111030).

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摘要： A combination of self-aligned fluoride-based plasma treatment and post-gate rapid thermal annealing was developed to fabricate a novel 120-nm T-shaped gate normally-off metamorphic Al0.49In0.51As/Ga0.47In0.53As HEMT device on a Si substrate grown by metal-organic chemical vapor deposition (MOCVD). A shift of the threshold voltage, from -0.42 V to 0.11 V was obtained and the shift can be effectively adjusted by the process parameter of CF4 plasma treatment. Furthermore, a side benefit of reducing the leakage current of the device up to two orders of magnitude was also observed. E-mode transistors with 120 nm gate length own fT up to 160 GHz and fmax of 140 GHz. These characteristics imply the potential of the fluoride-based plasma treatment technology for the fabrication of monolithic enhancement/depletion-mode mHEMTs, which also encourage the massive production with this low-cost technology.

关键词: metamorphic AlInAs/AlInAs HEMTs, metal-organic chemical vapor deposition, normally-off, CF4 plasma

Abstract: A combination of self-aligned fluoride-based plasma treatment and post-gate rapid thermal annealing was developed to fabricate a novel 120-nm T-shaped gate normally-off metamorphic Al0.49In0.51As/Ga0.47In0.53As HEMT device on a Si substrate grown by metal-organic chemical vapor deposition (MOCVD). A shift of the threshold voltage, from -0.42 V to 0.11 V was obtained and the shift can be effectively adjusted by the process parameter of CF4 plasma treatment. Furthermore, a side benefit of reducing the leakage current of the device up to two orders of magnitude was also observed. E-mode transistors with 120 nm gate length own fT up to 160 GHz and fmax of 140 GHz. These characteristics imply the potential of the fluoride-based plasma treatment technology for the fabrication of monolithic enhancement/depletion-mode mHEMTs, which also encourage the massive production with this low-cost technology.

Key words: metamorphic AlInAs/AlInAs HEMTs, metal-organic chemical vapor deposition, normally-off, CF4 plasma

中图分类号:  (III-V semiconductors)

  • 81.05.Ea