中国物理B ›› 2015, Vol. 24 ›› Issue (6): 67203-067203.doi: 10.1088/1674-1056/24/6/067203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

郭榕榕, 介万奇, 查钢强, 徐亚东, 冯涛, 王涛, 杜卓同   

  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
  • 收稿日期:2014-09-17 修回日期:2015-01-05 出版日期:2015-06-05 发布日期:2015-06-05
  • 基金资助:

    Project supported by the National Instrumentation Program, China (Grant No. 2011YQ040082), the National Natural Science Foundation of China (Grant Nos. 61274081, 51372205, and 51202197), the National 973 Project of China (Grant No. 2011CB610400), the China Postdoctoral Science Foundation (Grant No. 2014M550509), and the 111 Project of China (Grant No. B08040).

Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

Guo Rong-Rong (郭榕榕), Jie Wan-Qi (介万奇), Zha Gang-Qiang (查钢强), Xu Ya-Dong (徐亚东), Feng Tao (冯涛), Wang Tao (王涛), Du Zhuo-Tong (杜卓同)   

  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
  • Received:2014-09-17 Revised:2015-01-05 Online:2015-06-05 Published:2015-06-05
  • Contact: Jie Wan-Qi E-mail:jwq@nwpu.edu.cn
  • About author:72.80.Ey; 73.50.Gr; 73.61.Ga; 72.20.Jv
  • Supported by:

    Project supported by the National Instrumentation Program, China (Grant No. 2011YQ040082), the National Natural Science Foundation of China (Grant Nos. 61274081, 51372205, and 51202197), the National 973 Project of China (Grant No. 2011CB610400), the China Postdoctoral Science Foundation (Grant No. 2014M550509), and the 111 Project of China (Grant No. B08040).

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摘要：

The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole–Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32× 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

关键词: CdZnTe, LBIC, de-trapping, electron transport process, mobility

Abstract:

The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole–Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V·s and the corresponding electron mobility-lifetime product is found to be 1.32× 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

Key words: CdZnTe, LBIC, de-trapping, electron transport process, mobility

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.61.Ga (II-VI semiconductors) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)