Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

doi:10.1088/1674-1056/24/6/067301

中国物理B ›› 2015, Vol. 24 ›› Issue (6): 67301-067301.doi: 10.1088/1674-1056/24/6/067301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

何晓光, 赵德刚, 江德生

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2014-11-05 修回日期:2014-12-06 出版日期:2015-06-05 发布日期:2015-06-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2014-11-05 Revised:2014-12-06 Online:2015-06-05 Published:2015-06-05
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
About author:73.40.-c
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

摘要/Abstract

摘要： Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.

关键词: high electron mobility transistors, GaN, two-dimensional electron gas, polarization effect

Abstract: Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.

Key words: high electron mobility transistors, GaN, two-dimensional electron gas, polarization effect

中图分类号: (Electronic transport in interface structures)

73.40.-c

何晓光, 赵德刚, 江德生. Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression[J]. 中国物理B, 2015, 24(6): 67301-067301.

He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生). Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression[J]. Chin. Phys. B, 2015, 24(6): 67301-067301.

参考文献 12

[1]	Zhao S L, Mi M H, Hou B, Luo J, Wang Y, Dai Y, Zhang J C, Ma X H and Hao Y 2014 Chin. Phys. B 23 107303
[2]	Asif Khan M, Kuznia J N, Van Hove J M, Pan N and Carter J 1992 Appl. Phys. Lett. 60 3027
[3]	Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
[4]	Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S and Mishra U K 1999 J. Appl. Phys. 86 4520
[5]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[6]	Ambacher O, Majewski J, Miskys C, Link A, Hermann M, Eickhoff M, Stutzmann M, Bernardini F, Fiorentini V, Tilak V, Schaff B and Eastman L F 2002 J. Phys.: Condens. Matter 14 3399
[7]	Gonschorek M, Carlin J F, Feltin E, Py M A, Grandjean N, Darakchieva V, Monemar B, Lorenz M and Ramm G 2008 J. Appl. Phys. 103 093714
[8]	Ridley B K, Ambacher O and Eastman L F 2000 Semicond. Sci. Technol. 15 270
[9]	Yu E T, Sullivan G J, Asbeck P M, Wang C D, Qiao D and Lau S S 1997 Appl. Phys. Lett. 71 2794
[10]	Asbeck P M, Yu E T, Lau S S, Sullivan G J, Van Hove J and Redwing J 1997 Electron. Lett. 33 1230
[11]	Shen L, Heikman S, Moran B, Coffie R, Zhang N Q, Buttari D, Smorchkova I P, Keller S, DenBaars S P and Mishra U K 2001 IEEE Electron Dev. Lett. 22 457
[12]	Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars S P, Speck J S and Mishra U K 2001 J. Appl. Phys. 90 5196

[1]	Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate[J]. 中国物理B, 2023, 32(3): 37201-037201.
[2]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[3]	Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302.
[4]	Wen-Bo Chen(陈文博) and Zhi-Gang Bu(步志刚). Correction of intense laser-plasma interactions by QED vacuum polarization in collision of laser beams[J]. 中国物理B, 2023, 32(2): 25204-025204.
[5]	Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101.
[6]	Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701.
[7]	Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306.
[8]	Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets[J]. 中国物理B, 2023, 32(1): 18103-018103.
[9]	Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401.
[10]	Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Liquid-phase synthesis of Li₂S and Li₃PS₄ with lithium-based organic solutions[J]. 中国物理B, 2022, 31(9): 98203-098203.
[11]	Jing-Yu Zhao(赵靖宇) and Zheng-Yu Weng(翁征宇). Mottness, phase string, and high-T_c superconductivity[J]. 中国物理B, 2022, 31(8): 87104-087104.
[12]	Pei-Feng Lin(林培锋), Xiao Hu(胡箫), and Jian-Zhong Lin(林建忠). Inertial focusing and rotating characteristics of elliptical and rectangular particle pairs in channel flow[J]. 中国物理B, 2022, 31(8): 80501-080501.
[13]	Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers[J]. 中国物理B, 2022, 31(7): 74206-074206.
[14]	Yi Li(李毅), Mei Ge(葛梅), Meiyu Wang(王美玉), Youhua Zhu(朱友华), and Xinglong Guo(郭兴龙). Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes[J]. 中国物理B, 2022, 31(7): 77801-077801.
[15]	Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate[J]. 中国物理B, 2022, 31(6): 68501-068501.

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 12

相关文章 15

Metrics

本文评价

推荐阅读 0