Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

doi:10.1088/1674-1056/24/5/057801

中国物理B ›› 2015, Vol. 24 ›› Issue (5): 57801-057801.doi: 10.1088/1674-1056/24/5/057801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

刘建明^a, 张洁^a, 林文禹^a, 叶孟欣^a, 冯向旭^a, 张东炎^a, Steve Ding^a, 徐宸科^a, 刘宝林^b

a Sanan Optoelectronics Techonology LTD, Xiamen 361009, China;
b Department of Physics, Xiamen University, Xiamen 361005, China

收稿日期:2014-11-09 修回日期:2014-12-18 出版日期:2015-05-05 发布日期:2015-05-05
基金资助:
Project support by the National High Technology Research and Development Program of China (Green Laser).

Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

Liu Jian-Ming (刘建明)^a, Zhang Jie (张洁)^a, Lin Wen-Yu (林文禹)^a, Ye Meng-Xin (叶孟欣)^a, Feng Xiang-Xu (冯向旭)^a, Zhang Dong-Yan (张东炎)^a, Steve Ding^a, Xu Chen-Ke (徐宸科)^a, Liu Bao-Lin (刘宝林)^b

a Sanan Optoelectronics Techonology LTD, Xiamen 361009, China;
b Department of Physics, Xiamen University, Xiamen 361005, China

Received:2014-11-09 Revised:2014-12-18 Online:2015-05-05 Published:2015-05-05
Contact: Liu Jian-Ming E-mail:liujianming@sanan-e.com
About author:78.55.-m; 78.30.Fs
Supported by:
Project support by the National High Technology Research and Development Program of China (Green Laser).

摘要/Abstract

摘要： In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions.

关键词: semipolar, pressure, metal-organic chemical vapor deposition

Abstract: In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions.

Key words: semipolar, pressure, metal-organic chemical vapor deposition

中图分类号: (Photoluminescence, properties and materials)

78.55.-m

78.30.Fs (III-V and II-VI semiconductors)

刘建明, 张洁, 林文禹, 叶孟欣, 冯向旭, 张东炎, Steve Ding, 徐宸科, 刘宝林. Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates[J]. 中国物理B, 2015, 24(5): 57801-057801.

Liu Jian-Ming (刘建明), Zhang Jie (张洁), Lin Wen-Yu (林文禹), Ye Meng-Xin (叶孟欣), Feng Xiang-Xu (冯向旭), Zhang Dong-Yan (张东炎), Steve Ding, Xu Chen-Ke (徐宸科), Liu Bao-Lin (刘宝林). Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates[J]. Chin. Phys. B, 2015, 24(5): 57801-057801.

参考文献 19

[1]	Nakamura S, Senoh M, lwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M and Chocho K 1997 Jpn. J. Appl. Phys. 36 L1586
[2]	Keller S, Vetury R, Parish G, DenBaars S P and Mishra U K 2001 Appl. Phys. Lett. 78 3088
[3]	Narukawa Y, Niki I, Izuno K, Yamada M, Murazki Y and Mukai T 2002 Jpn. J. Appl. Phys. 41 L371
[4]	Ueno M, Yoshizumi Y, Enya Y, Kyono T, Adachi M, Takagi S, Tokuyama S, Sumitomo T, Sumiyoshi K, Saga N, Ikegami T, Katayama K and Nakamura T 2011 J. Crystal Growth 15 258
[5]	Chiu C H, Lin D W, Lin C C, Li Z Y, Chang W T, Hsu H W, Kuo H C, Lu T C, Wang S C, Liao W T, Tanikawa T, Honda Y, Yamaguchi M and Sawaki N 2011 Appl. Phys. Express 40 12105
[6]	Zhang B, Liang H, Wang Y, Feng Z H, Ng K W and Lau K M 2007 J. Crystal Growth 298 725
[7]	Krost A and Dadgar A 2002 Materials Science and Engineering B 9377
[8]	Mao Z, McKernan S, Carter C B, Yang W and McPherson S A 1999 MRS Internet J. Nitride Semicond. Res. 4S1 G3.13
[9]	Marchand H, Zhang N, Zhao L, Golan Y, Rosner S J, Girolami G, Fini P T, Ibbetson J P, Keller S, DenBaars S, Speck J S and Mishra U K 1999 MRS Internet J. Nitride Semicond. Res. 4 2
[10]	Honda Y, Kameshiro N, Yamaguchi M and Sawaki N 2002 J. Crystal Growth 242 82
[11]	Sawaki N, Hikosaka T, Koide N, Tanaka S, Honda Y and Yamaguchi M 2009 J. Crystal Growth 311 2867
[12]	Murase T, Tanikawa T, Honda Y, Yamaguchi M, Amano H and Sawaki N 2011 Jpn. J. Appl. Phys. 50 01AD04
[13]	Lin H Y 2007 Characterization of GaN and InGaN Grown on Patterned 7o-off (001) Si Substrate 37
[14]	Hiramatsu K, Nishiyama K, Motogaito A, Miyake H, Iyechika Y and Maeda T 1999 Phys. Stat. Sol. 176 535
[15]	Wu Z H, Tanikawa T, Murase T, Fang Y Y, Chen C Q, Honda Y, Yamaguchi M, Amano H and Sawaki N 2011 Appl. Phys. Lett. 98 051902
[16]	Ni X, Özgür Ü, Fu Y, Biyikli N, Xie J, Baski A A, Morkoç H and Liliental-Weber Z 2006 Appl. Phys. Lett. 89 262105
[17]	Sawaki N, Ito S, Nakagita T, Iwata D H, Tanikawa T, Irie M, Honda Y, Yamaguchi M and Amano H 2002 Proc. SPIE 8625 86250K-1
[18]	Nakano Y, Irokawa Y and Takeguchi M 2008 Appl. Phys. Express 1 091101
[19]	Armstrong A M, Crawford M H and Koleske D D 2014 Appl. Phys. Express 7 032101

Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

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