A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

doi:10.1088/1674-1056/24/10/107305

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107305-107305.doi: 10.1088/1674-1056/24/10/107305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

郑佳欣^a, 马晓华^a, 卢阳^b, 赵博超^b, 张宏鹤^a, 张濛^a, 曹梦逸^b, 郝跃^{a b}

a School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China;
b School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2015-06-02 修回日期:2015-06-29 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant No. 61334002).

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

Zheng Jia-Xin (郑佳欣)^a, Ma Xiao-Hua (马晓华)^a, Lu Yang (卢阳)^b, Zhao Bo-Chao (赵博超)^b, Zhang Hong-He (张宏鹤)^a, Zhang Meng (张濛)^a, Cao Meng-Yi (曹梦逸)^b, Hao Yue (郝跃)^{a b}

a School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China;
b School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2015-06-02 Revised:2015-06-29 Online:2015-10-05 Published:2015-10-05
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant No. 61334002).

摘要/Abstract

摘要：

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f₀ and 2f₀). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance.

关键词: AlGaN/GaN HEMT, high power-added efficiency, amplifier, microwave and millimeterwave devices and circuits, load pull

Abstract:

Key words: AlGaN/GaN HEMT, high power-added efficiency, amplifier, microwave and millimeterwave devices and circuits, load pull

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

84.60.Bk (Performance characteristics of energy conversion systems; figure of merit) 84.30.Le (Amplifiers) 84.40.-x (Radiowave and microwave (including millimeter wave) technology)

郑佳欣, 马晓华, 卢阳, 赵博超, 张宏鹤, 张濛, 曹梦逸, 郝跃. A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT[J]. 中国物理B, 2015, 24(10): 107305-107305.

Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Lu Yang (卢阳), Zhao Bo-Chao (赵博超), Zhang Hong-He (张宏鹤), Zhang Meng (张濛), Cao Meng-Yi (曹梦逸), Hao Yue (郝跃). A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT[J]. Chin. Phys. B, 2015, 24(10): 107305-107305.

参考文献 21

[1]	Trew R J, Bilbro G L, Kuang W, Liu Y and Yin H 2005 Microwave Magazine IEEE 656
[2]	Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 901022
[3]	Ma X H, Wei J X, Cao M Y, Lu Y, Zhao B C, Dong L, Wang Y and Hao Y 2014 Chin. Phys. Lett 31 108401
[4]	Cao M Y, Zhang K, Chen Y H, Zhang J C, Ma X H and Hao Y 2014 Chin. Phys. B 23 037305
[5]	Zhao B C, Ma X H, Lu Y, Zheng J X, Han W Z, Zhang H H, Zhang Y L and Hao Y 2015 IEICE Electron. Express 121
[6]	Lu Y, Cao M Y, Wei J X, Zhao B C, Ma X H and Hao Y 2014 Electron. Lett. 501207
[7]	Otsuka H, Yamanaka K, Noto H, Tsuyama Y, Chaki S, Inoue A and Miyazaki M 2008 Microwave Symposium Diest, 2008 IEEE MTT-S International, June 10-20, 2008, Atlanta, USA, p. 311
[8]	Yamasaki T, Kittaka Y, Minamide H, Yamauchi K, Miwa S, Goto S, Nakayama M, Kohno M and Yoshida N 2010 Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, May, 23-28, 2010, Anaheim, California, USA, p. 1384
[9]	Colantonio P, Giannini F, Giofre R, Limit E, Serino A, Peroni M, Romanini P and Proietti C 2006 IEEE Trans. Microwave Theory Techniques 542713
[10]	Maeda M, Masato H, Takehara H, Nakamura M, Morimoto S, Fujimoto Hiromasa, Ota Yorito and Ishikawa Osamu 1995 IEEE Trans. Microwave Theory Techniques 432952
[11]	Zhao S L, Chen W W, Yue T, Wang Y, Luo J, Mao W, Ma X H and Hao Y 2013 Chin. Phys. B 22 117307
[12]	Zhang K, Cao M Y, Lei X Y, Zhao S L, Yang L Y, Zheng X F, Ma X H and Hao Y 2013 Chin. Phys. B 22 097303
[13]	Hao Y, Yang L, Ma X H, Ma J G, Cao M Y, Pan C Y, Wang C and Zhang J C 2011 IEEE Electron Dev. Lett. 32626
[14]	Cao M Y, Lu Y, Wei J X, Chen Y H, Li W J, Zheng J X, Ma X H and Hao Y 2014 Chin. Phys. B 23 087201
[15]	Ma X H, Lv M, Pang L, Jiang Y Q, Yang J Z, Chen W W and Liu X Y 2014 Chin. Phys. B 23 027302
[16]	Florian C, Cignani R, Santarelli A, Filicori F and Longo F 2013 Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International, June, 2-7, 2013, Seattle, USA, p. 1
[17]	Cree, Durham, NC, USA, "Product Data Sheet", 2012. Online: http://www.cree.com/～/media/Files/Cree/RF/Chinese/data%20sheets/ CMPA5585025D.pdf,
[18]	Florian C, Cignani R, Niessen D snd Santarelli Alberto 2012 IEEE Microwave and Wireless Components Letters 22 471
[19]	Triquint, Richardson, TX, USA, "Product Data Sheet", 2011. [Online] available at http://www.triquint.com/products/p/TGA2576-FL, [2015-06-01]
[20]	Giordani R, Amici M, Barigelli A, Conti F, Del Marro M, Feudale M, Imparato M and Suriani A 2009 "Microwave Integrated Circuits Conference", 2009 EUMIC, September, 28-29, 2009, Nuova Fiera di Roma Rome, Italy, p. 407
[21]	Gonzalez-Garrido M A, Grajal J, Cetronio A and Marescialli L 2009 "Microwave Integrated Circuits Conference", 2009 EUMIC, September, 28-29, 2009. Nuova Fiera di Roma Rome, Italy, p. 218

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 21

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wei Liu(刘伟), Shuai Ren(任帅), Pengfei Ma(马鹏飞), and Pu Zhou(周朴). Impact of amplified spontaneous emission noise on the SRS threshold of high-power fiber amplifiers[J]. 中国物理B, 2023, 32(3): 34202-034202.
[2]	Shun Li(李舜), Ping-Xue Li(李平雪), Min Yang(杨敏), Ke-Xin Yu(于可新), Yun-Chen Zhu(朱云晨), Xue-Yan Dong(董雪岩), and Chuan-Fei Yao(姚传飞). The 266-nm ultraviolet-beam generation of all-fiberized super-large-mode-area narrow-linewidth nanosecond amplifier with tunable pulse width and repetition rate[J]. 中国物理B, 2022, 31(3): 34207-034207.
[3]	Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching[J]. 中国物理B, 2022, 31(2): 27301-027301.
[4]	Wentao Wu(伍文涛), Zhirong Lin(林志荣), Zhi Ni(倪志), Peizhan Li(李佩展), Tiantian Liang(梁恬恬), Guofeng Zhang(张国峰), Yongliang Wang(王永良), Liliang Ying(应利良), Wei Peng(彭炜), Wen Zhang(张文), Shengcai Shi(史生才), Lixing You(尤立星), and Zhen Wang(王镇). Development of series SQUID array with on-chip filter for TES detector[J]. 中国物理B, 2022, 31(2): 28504-028504.
[5]	Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications[J]. 中国物理B, 2022, 31(11): 117105-117105.
[6]	Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华). Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress[J]. 中国物理B, 2022, 31(11): 117301-117301.
[7]	Sishi Wu(吴思诗), Dengke Zhang(张登科), Rui Wang(王锐), Yulong Liu(刘玉龙), Shuai-Peng Wang(王帅鹏), Qichun Liu(刘其春), J S Tsai(蔡兆申), and Tiefu Li(李铁夫). Vacuum-gap-based lumped element Josephson parametric amplifier[J]. 中国物理B, 2022, 31(1): 10306-010306.
[8]	Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇). C band microwave damage characteristics of pseudomorphic high electron mobility transistor[J]. 中国物理B, 2021, 30(9): 98502-098502.
[9]	Renchong Lv(吕仁冲), Hao Teng(滕浩), Jiajun Song(宋贾俊), Renzhu Kang(康仁铸), Jiangfeng Zhu(朱江峰), and Zhiyi Wei(魏志义). All-fiber laser seeded femtosecond Yb:KGW solid state regenerative amplifier[J]. 中国物理B, 2021, 30(9): 94206-094206.
[10]	Kuan-Lin Mu(穆宽林), Xing Chen(陈星), Zheng-Kang Wang(王正康), Yao-Jun Qiao(乔耀军), and Song Yu(喻松). Modeling of cascaded high isolation bidirectional amplification in long-distance fiber-optic time and frequency synchronization system[J]. 中国物理B, 2021, 30(7): 74208-074208.
[11]	Hang Xue(薛航), Zhirong Lin(林志荣), Wenbing Jiang(江文兵), Zhengqi Niu(牛铮琦), Kuang Liu(刘匡), Wei Peng(彭炜), and Zhen Wang(王镇). Fabrication and characterization of all-Nb lumped-element Josephson parametric amplifiers[J]. 中国物理B, 2021, 30(6): 68503-068503.
[12]	Yang Zhang(张旸), Yu-Bo Ma(马宇波), Xin-Ping Li(李新平), Yu Guo(郭钰), and Chang-Shui Yu(于长水). Perfect photon absorption based on the optical parametric process[J]. 中国物理B, 2021, 30(6): 64203-064203.
[13]	Pengtao Song(宋鹏涛), Xueyi Guo(郭学仪), Kai Xu(许凯), Xiaohui Song(宋小会), Zhan Wang(王战), Zhongcheng Xiang(相忠诚), Hekang Li(李贺康), Luhong Su(苏鹭红), Yirong Jin(金贻荣), and Dongning Zheng(郑东宁). Fabrication of Josephson parameter amplifier and its applicationin squeezing vacuum fluctuations[J]. 中国物理B, 2021, 30(12): 128502-128502.
[14]	Huijun He(何会军), Jun Yu(余军), Wentao Zhu(朱文涛), Qingdian Lin(林庆典), Xiaoyang Guo(郭晓杨), Cangtao Zhou(周沧涛), and Shuangchen Ruan(阮双琛). A 61-mJ, 1-kHz cryogenic Yb: YAG laser amplifier[J]. 中国物理B, 2021, 30(12): 124206-124206.
[15]	Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞). Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors[J]. 中国物理B, 2021, 30(10): 108502-108502.