中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97301-097301.doi: 10.1088/1674-1056/21/9/097301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells

朱俊a, 班士良a, 哈斯花b   

  1. a Key Laboratory of Semiconductor Photovoltaic Technology, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China;
    b Department of Physics, College of Sciences, Inner Mongolia University of Technology, Hohhot 010051, China
  • 收稿日期:2012-01-02 修回日期:2012-03-21 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60966001) and the Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 2010BS0102).

Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells

Zhu Jun (朱俊)a, Ban Shi-Liang (班士良)a, Ha Si-Hua (哈斯花)b   

  1. a Key Laboratory of Semiconductor Photovoltaic Technology, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China;
    b Department of Physics, College of Sciences, Inner Mongolia University of Technology, Hohhot 010051, China
  • Received:2012-01-02 Revised:2012-03-21 Online:2012-08-01 Published:2012-08-01
  • Contact: Ban Shi-Liang E-mail:slban@imu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60966001) and the Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 2010BS0102).

摘要: A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/InxGa1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.

关键词: phonon-assisted intersubband transition, wurtzite quantum well, built-in electric field

Abstract: A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/InxGa1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.

Key words: phonon-assisted intersubband transition, wurtzite quantum well, built-in electric field

中图分类号:  (Quantum wells)

  • 73.21.Fg
72.10.Di (Scattering by phonons, magnons, and other nonlocalized excitations) 77.65.Ly (Strain-induced piezoelectric fields)