Effects of polarization on intersubband transitions of AlxGa1-xN/GaN multi-quantum wells

doi:10.1088/1674-1056/22/5/057302

中国物理B ›› 2013, Vol. 22 ›› Issue (5): 57302-057302.doi: 10.1088/1674-1056/22/5/057302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells

田武^a, 鄢伟一^a, 熊晖^a, 戴江南^a, 方妍妍^a, 吴志浩^a, 余晨辉^b, 陈长清^a

a Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
b Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China

收稿日期:2012-09-03 修回日期:2012-10-21 出版日期:2013-04-01 发布日期:2013-04-01
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2012CB619302 and 2010CB923204), the National Natural Science Foundation of China (Grant Nos. 60976042, 51002058, and 11104150), and the China Postdoctoral Science Foundation (Grant No. 20100480064).

Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells

Tian Wu (田武)^a, Yan Wei-Yi (鄢伟一)^a, Xiong Hui (熊晖)^a, Dai Jian-Nan (戴江南)^a, Fang Yan-Yan (方妍妍)^a, Wu Zhi-Hao (吴志浩)^a, Yu Chen-Hui (余晨辉)^b, Chen Chang-Qin (陈长清)^a

a Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
b Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China

Received:2012-09-03 Revised:2012-10-21 Online:2013-04-01 Published:2013-04-01
Contact: Xiong Hui E-mail:hsiung.hust@gmail.com
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2012CB619302 and 2010CB923204), the National Natural Science Foundation of China (Grant Nos. 60976042, 51002058, and 11104150), and the China Postdoctoral Science Foundation (Grant No. 20100480064).

摘要/Abstract

摘要： The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multi-quantum wells (MQWs) have been investigated by solving the Schrödinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.

关键词: intersubband transition, polarization, electron subband levels, AlGaN/GaN quantum well

Abstract: The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multi-quantum wells (MQWs) have been investigated by solving the Schrödinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.

Key words: intersubband transition, polarization, electron subband levels, AlGaN/GaN quantum well

中图分类号: (Quantum wells)

73.21.Fg

73.22.-f (Electronic structure of nanoscale materials and related systems)

田武, 鄢伟一, 熊晖, 戴江南, 方妍妍, 吴志浩, 余晨辉, 陈长清. Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells[J]. 中国物理B, 2013, 22(5): 57302-057302.

Tian Wu (田武), Yan Wei-Yi (鄢伟一), Xiong Hui (熊晖), Dai Jian-Nan (戴江南), Fang Yan-Yan (方妍妍), Wu Zhi-Hao (吴志浩), Yu Chen-Hui (余晨辉), Chen Chang-Qin (陈长清). Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells[J]. Chin. Phys. B, 2013, 22(5): 57302-057302.

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Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells

Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells

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