High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

doi:10.1088/1674-1056/23/7/077307

›› 2014, Vol. 23 ›› Issue (7): 77307-077307.doi: 10.1088/1674-1056/23/7/077307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

陈万军^{a b}, 孙瑞泽^a, 彭朝飞^a, 张波^a

a The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610051, China;
b The Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, China

收稿日期:2014-02-08 修回日期:2014-04-01 出版日期:2014-07-15 发布日期:2014-07-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. U1330114), the Advance Research Program, China (Grant No. 51308030407), and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201201).

High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

Chen Wan-Jun (陈万军)^{a b}, Sun Rui-Ze (孙瑞泽)^a, Peng Chao-Fei (彭朝飞)^a, Zhang Bo (张波)^a

a The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610051, China;
b The Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, China

Received:2014-02-08 Revised:2014-04-01 Online:2014-07-15 Published:2014-07-15
Contact: Chen Wan-Jun E-mail:wjchen@uestc.edu.cn
About author:73.61.Cw; 73.40.Qv; 73.90.+f
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. U1330114), the Advance Research Program, China (Grant No. 51308030407), and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201201).

摘要/Abstract

摘要： An analysis model of the dV/dt capability for a metal-oxide-semiconductor (MOS) controlled thyristor (MCT) is developed. It is shown that, in addition to the P-well resistance reported previously, the existence of the OFF-FET channel resistance in the MCT may degrade the dV/dt capability. Lower P-well and N-well dosages in the MCT are useful in getting a lower threshold voltage of OFF-FET and then a higher dV/dt immunity. However, both dosages are restricted by the requirements for the blocking property and the forward conduction capability. Thus, a double variable lateral doping (DVLD) technique is proposed to realize a high dV/dt immunity without any sacrifice in other properties. The accuracy of the developed model is verified by comparing the obtained results with those from simulations. In addition, this DVLD MCT features mask-saving compared with the conventional MCT fabrication process. The excellent device performance, coupled with the simple fabrication, makes the proposed DVLP MCT a promising candidate for capacitor discharge applications.

关键词: MOS controlled thyristor, capacitor discharge

Abstract: An analysis model of the dV/dt capability for a metal-oxide-semiconductor (MOS) controlled thyristor (MCT) is developed. It is shown that, in addition to the P-well resistance reported previously, the existence of the OFF-FET channel resistance in the MCT may degrade the dV/dt capability. Lower P-well and N-well dosages in the MCT are useful in getting a lower threshold voltage of OFF-FET and then a higher dV/dt immunity. However, both dosages are restricted by the requirements for the blocking property and the forward conduction capability. Thus, a double variable lateral doping (DVLD) technique is proposed to realize a high dV/dt immunity without any sacrifice in other properties. The accuracy of the developed model is verified by comparing the obtained results with those from simulations. In addition, this DVLD MCT features mask-saving compared with the conventional MCT fabrication process. The excellent device performance, coupled with the simple fabrication, makes the proposed DVLP MCT a promising candidate for capacitor discharge applications.

Key words: MOS controlled thyristor, capacitor discharge

中图分类号: (Elemental semiconductors)

73.61.Cw

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

陈万军, 孙瑞泽, 彭朝飞, 张波. High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications[J]. , 2014, 23(7): 77307-077307.

Chen Wan-Jun (陈万军), Sun Rui-Ze (孙瑞泽), Peng Chao-Fei (彭朝飞), Zhang Bo (张波). High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications[J]. Chin. Phys. B, 2014, 23(7): 77307-077307.

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High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

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