Thermal effect mechanism of magnetoresistance in p-type diamond films

doi:10.1088/1674-1056/19/11/117501

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117501-117501.doi: 10.1088/1674-1056/19/11/117501

Thermal effect mechanism of magnetoresistance in p-type diamond films

方亮¹, 秦国平², 孔春阳², 阮海波², 黄桂娟², 崔玉亭²

(1)Department of Applied Physics, Chongqing University, Chongqing 400044, China; (2)Key Laboratory of Optical Engineering, Chongqing Normal University, Chongqing 400047, China

收稿日期:2010-03-22 修回日期:2010-05-17 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the Chongqing City Education Commission of China (Grant No. 040804).

Thermal effect mechanism of magnetoresistance in p-type diamond films

Qin Guo-Ping(秦国平)^a), Kong Chun-Yang(孔春阳)^a)†, Ruan Hai-Bo(阮海波)^a), Huang Gui-Juan(黄桂娟)^a), Cui Yu-Ting(崔玉亭)^a), and Fang Liang(方亮)^b)

^a Key Laboratory of Optical Engineering, Chongqing Normal University, Chongqing 400047, China; ^b Department of Applied Physics, Chongqing University, Chongqing 400044, China

Received:2010-03-22 Revised:2010-05-17 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the Chongqing City Education Commission of China (Grant No. 040804).

摘要/Abstract

摘要： Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.

Abstract: Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.

Key words: diamond film, magnetoresistance, valence-band split-off

中图分类号: (Semiconductor compounds)

71.20.Nr

73.50.Jt (Galvanomagnetic and other magnetotransport effects) 73.61.Cw (Elemental semiconductors)

秦国平, 孔春阳, 阮海波, 黄桂娟, 崔玉亭, 方亮. Thermal effect mechanism of magnetoresistance in p-type diamond films[J]. 中国物理B, 2010, 19(11): 117501-117501.

Qin Guo-Ping(秦国平), Kong Chun-Yang(孔春阳), Ruan Hai-Bo(阮海波), Huang Gui-Juan(黄桂娟), Cui Yu-Ting(崔玉亭), and Fang Liang(方亮). Thermal effect mechanism of magnetoresistance in p-type diamond films[J]. Chin. Phys. B, 2010, 19(11): 117501-117501.

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Thermal effect mechanism of magnetoresistance in p-type diamond films

Thermal effect mechanism of magnetoresistance in p-type diamond films

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