中国物理B ›› 2009, Vol. 18 ›› Issue (2): 778-782.doi: 10.1088/1674-1056/18/2/061

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Effect of hydrogenation time on magnetic and electrical properties of polycrystalline Si0.956Mn0.044:B thin films

陆智海1, 林应斌1, 王剑峰1, 路忠林1, 吕丽娅1, 张凤鸣1, 都有为1, 刘兴翀2   

  1. (1)Department of Physics, Nanjing University, Nanjing 210093, China; (2)School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2008-03-19 修回日期:2008-09-08 出版日期:2009-02-20 发布日期:2009-02-20
  • 基金资助:
    Project supported by the National Key Program for Fundamental Research Development Plan of China (973 project).

Effect of hydrogenation time on magnetic and electrical properties of polycrystalline Si0.956Mn0.044:B thin films

Liu Xing-Chong(刘兴翀)a)†, Lu Zhi-Hai(陆智海)b), Lin Ying-Bin(林应斌)b), Wang Jian-Feng(王剑峰)b), Lu Zhong-Lin(路忠林)b), Lü Li-Ya(吕丽娅)b), Zhang Feng-Ming(张凤鸣)b), and Du You-Wei(都有为)b)   

  1. a School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2008-03-19 Revised:2008-09-08 Online:2009-02-20 Published:2009-02-20
  • Supported by:
    Project supported by the National Key Program for Fundamental Research Development Plan of China (973 project).

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摘要： This paper reports that polycrystalline Si0.956Mn0.044:B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma enhanced chemical vapour deposition for different time of 10 minutes, 15 minutes and 40 minutes. After hydrogenation, the structural properties of the films do not show any change, while both the saturation magnetization and the hole concentration in the films increase at first, then decrease with the increase of hydrogenation time. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si0.956Mn0.044:B films suggests that a mechanism of hole-mediated ferromagnetism is believed to exist in Si-based diluted magnetic semiconductors.

关键词: magnetic semiconductor, silicon, magnetism

Abstract: This paper reports that polycrystalline Si0.956Mn0.044:B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma enhanced chemical vapour deposition for different time of 10 minutes, 15 minutes and 40 minutes. After hydrogenation, the structural properties of the films do not show any change, while both the saturation magnetization and the hole concentration in the films increase at first, then decrease with the increase of hydrogenation time. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si0.956Mn0.044:B films suggests that a mechanism of hole-mediated ferromagnetism is believed to exist in Si-based diluted magnetic semiconductors.

Key words: magnetic semiconductor, silicon, magnetism

中图分类号:  (Magnetic properties of monolayers and thin films)

  • 75.70.Ak
81.15.Cd (Deposition by sputtering) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 75.50.Pp (Magnetic semiconductors) 73.61.Cw (Elemental semiconductors)