Magneto-transport properties of thin flakes of Weyl semiconductor tellurium

doi:10.1088/1674-1056/ac0a5e

中国物理B ›› 2021, Vol. 30 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/ac0a5e

Magneto-transport properties of thin flakes of Weyl semiconductor tellurium

Nan Zhang(张南)^1,2, Bin Cheng(程斌)^1,2, Hui Li(李惠)³, Lin Li(李林)^1,2,†, and Chang-Gan Zeng(曾长淦)^1,2,‡

1 International Center for Quantum Design of Functional Materials, Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information&Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
2 CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei 230026, China;
3 Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

收稿日期:2021-06-07 修回日期:2021-06-07 接受日期:2021-06-11 出版日期:2021-07-16 发布日期:2021-08-09
通讯作者: Lin Li, Chang-Gan Zeng E-mail:lilin@ustc.edu.cn;cgzeng@ustc.edu.cn
基金资助:
Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDC07010000), the National Natural Science Foundation of China (Grant Nos. 11974324, U1832151, 11804326, and 11904001), the National Key Research and Development Program of China (Grant No. 2017YFA0403600), the Anhui Initiative Fund in Quantum Information Technologies (Grant No. AHY170000), and the Fund from the Hefei Science Center, Chinese Academy of Sciences (Grant No. 2020HSC-UE014).

Magneto-transport properties of thin flakes of Weyl semiconductor tellurium

Nan Zhang(张南)^1,2, Bin Cheng(程斌)^1,2, Hui Li(李惠)³, Lin Li(李林)^1,2,†, and Chang-Gan Zeng(曾长淦)^1,2,‡

1 International Center for Quantum Design of Functional Materials, Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information&Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
2 CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei 230026, China;
3 Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

Received:2021-06-07 Revised:2021-06-07 Accepted:2021-06-11 Online:2021-07-16 Published:2021-08-09
Contact: Lin Li, Chang-Gan Zeng E-mail:lilin@ustc.edu.cn;cgzeng@ustc.edu.cn
Supported by:
Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDC07010000), the National Natural Science Foundation of China (Grant Nos. 11974324, U1832151, 11804326, and 11904001), the National Key Research and Development Program of China (Grant No. 2017YFA0403600), the Anhui Initiative Fund in Quantum Information Technologies (Grant No. AHY170000), and the Fund from the Hefei Science Center, Chinese Academy of Sciences (Grant No. 2020HSC-UE014).

摘要/Abstract

摘要： As an elemental semiconductor, tellurium has recently attracted intense interest due to its non-trivial band topology, and the resulted intriguing topological transport phenomena. In this study we report systematic electronic transport studies on tellurium flakes grown via a simple vapor deposition process. The sample is self-hole-doped, and exhibits typical weak localization behavior at low temperatures. Substantial negative longitudinal magnetoresistance under parallel magnetic field is observed over a wide temperature region, which is considered to share the same origin with that in tellurium bulk crystals, i.e., the Weyl points near the top of valence band. However, with lowering temperature the longitudinal magnetoconductivity experiences a transition from parabolic to linear field dependency, differing distinctly from the bulk counterparts. Further analysis reveals that such a modulation of Weyl behaviors in this low-dimensional tellurium structure can be attributed to the enhanced inter-valley scattering at low temperatures. Our results further extend Weyl physics into a low-dimensional semiconductor system, which may find its potential application in designing topological semiconductor devices.

关键词: Weyl physics, tellurium flakes, negative longitudinal magnetoresistance

Abstract: As an elemental semiconductor, tellurium has recently attracted intense interest due to its non-trivial band topology, and the resulted intriguing topological transport phenomena. In this study we report systematic electronic transport studies on tellurium flakes grown via a simple vapor deposition process. The sample is self-hole-doped, and exhibits typical weak localization behavior at low temperatures. Substantial negative longitudinal magnetoresistance under parallel magnetic field is observed over a wide temperature region, which is considered to share the same origin with that in tellurium bulk crystals, i.e., the Weyl points near the top of valence band. However, with lowering temperature the longitudinal magnetoconductivity experiences a transition from parabolic to linear field dependency, differing distinctly from the bulk counterparts. Further analysis reveals that such a modulation of Weyl behaviors in this low-dimensional tellurium structure can be attributed to the enhanced inter-valley scattering at low temperatures. Our results further extend Weyl physics into a low-dimensional semiconductor system, which may find its potential application in designing topological semiconductor devices.

Key words: Weyl physics, tellurium flakes, negative longitudinal magnetoresistance

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 73.61.Cw (Elemental semiconductors) 73.20.Fz (Weak or Anderson localization)

Nan Zhang(张南), Bin Cheng(程斌), Hui Li(李惠), Lin Li(李林), and Chang-Gan Zeng(曾长淦). Magneto-transport properties of thin flakes of Weyl semiconductor tellurium[J]. 中国物理B, 2021, 30(8): 87304-087304.

Nan Zhang(张南), Bin Cheng(程斌), Hui Li(李惠), Lin Li(李林), and Chang-Gan Zeng(曾长淦). Magneto-transport properties of thin flakes of Weyl semiconductor tellurium[J]. Chin. Phys. B, 2021, 30(8): 87304-087304.

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Magneto-transport properties of thin flakes of Weyl semiconductor tellurium

Magneto-transport properties of thin flakes of Weyl semiconductor tellurium

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