Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

doi:10.1088/1674-1056/23/4/048501

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48501-048501.doi: 10.1088/1674-1056/23/4/048501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

许宗祥^a, Roy V. A. L.^b

a Department of Chemistry, South University of Science and Technology of China, Shenzhen 518055, China;
b Center Of Superdiamond and Advanced Films (COSDAF), Department of Physics and Materials Science,City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China

收稿日期:2013-07-16 修回日期:2013-08-13 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the Special Funds for the Development of Strategic Emerging Industries in Shenzhen City, China (Grant No. JCYJ20120830154526537), the Start-up Funding of South University of Science and Technology of China, and the Strategic Research Grant of City University of Hong Kong of China (Grant No. 7002724).

Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

Xu Zong-Xiang (许宗祥)^a, Roy V. A. L.^b

a Department of Chemistry, South University of Science and Technology of China, Shenzhen 518055, China;
b Center Of Superdiamond and Advanced Films (COSDAF), Department of Physics and Materials Science,City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China

Received:2013-07-16 Revised:2013-08-13 Online:2014-04-15 Published:2014-04-15
Contact: Xu Zong-Xiang E-mail:xu.zx@sustc.edu.cn
About author:85.30.Tv; 72.80.Le; 81.05.Fb
Supported by:
Project supported by the Special Funds for the Development of Strategic Emerging Industries in Shenzhen City, China (Grant No. JCYJ20120830154526537), the Start-up Funding of South University of Science and Technology of China, and the Strategic Research Grant of City University of Hong Kong of China (Grant No. 7002724).

摘要/Abstract

摘要： It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10^-2 cm²/V·s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.

关键词: field-effect transistor, monolayer P3HT, spin coating, grazing incidence X-ray diffraction

Abstract: It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10^-2 cm²/V·s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.

Key words: field-effect transistor, monolayer P3HT, spin coating, grazing incidence X-ray diffraction

中图分类号: (Field effect devices)

85.30.Tv

72.80.Le (Polymers; organic compounds (including organic semiconductors)) 81.05.Fb (Organic semiconductors)

许宗祥, Roy V. A. L.. Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors[J]. 中国物理B, 2014, 23(4): 48501-048501.

Xu Zong-Xiang (许宗祥), Roy V. A. L.. Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors[J]. Chin. Phys. B, 2014, 23(4): 48501-048501.

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Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

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