中国物理B ›› 2014, Vol. 23 ›› Issue (2): 27803-027803.doi: 10.1088/1674-1056/23/2/027803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

李密锋a, 倪海桥a, 丁颖b, Bajek Davidb, Kong Liangb, Cataluna Maria Anab, 牛智川a   

  1. a State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, UK
  • 收稿日期:2013-06-13 修回日期:2013-09-02 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4112060), the Special Foundation for National Key Scientific Instrument, China (Grant No. 2012YQ140005), the Open Fund of High Power Laser Laboratory, China Academy of Engineering Physics (Grant No. 2013HEL03), the National Natural Science Foundation of China (Grant No. 61274125), the National Basic Research Program, China (Grant No. 2010CB327601), the State Key Laboratory on Integrated Optoelectronics Open Project, China (Grant No. 2011KFB002). Y. Ding was financially supported by a Marie Curie International Incoming Fellowship within the 7th European Community Framework Programme, and M. A. Cataluna by the financial support through a Royal Academy of Engineering/EPSRC Research Fellowship.

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

Li Mi-Feng (李密锋)a, Ni Hai-Qiao (倪海桥)a, Ding Ying (丁颖)b, Bajek Davidb, Kong Liangb, Cataluna Maria Anab, Niu Zhi-Chuan (牛智川)a   

  1. a State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, UK
  • Received:2013-06-13 Revised:2013-09-02 Online:2013-12-12 Published:2013-12-12
  • Contact: Ni Hai-Qiao E-mail:nihq@semi.ac.cn
  • About author:78.67.Hc; 42.55.Px; 42.60.Fc; 81.10.-h
  • Supported by:
    Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4112060), the Special Foundation for National Key Scientific Instrument, China (Grant No. 2012YQ140005), the Open Fund of High Power Laser Laboratory, China Academy of Engineering Physics (Grant No. 2013HEL03), the National Natural Science Foundation of China (Grant No. 61274125), the National Basic Research Program, China (Grant No. 2010CB327601), the State Key Laboratory on Integrated Optoelectronics Open Project, China (Grant No. 2011KFB002). Y. Ding was financially supported by a Marie Curie International Incoming Fellowship within the 7th European Community Framework Programme, and M. A. Cataluna by the financial support through a Royal Academy of Engineering/EPSRC Research Fellowship.

PDF (PC)

506

赞

摘要： The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 ℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10-6 Torr (1 Torr=1.33322×102 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ～ 19.7-GHz repetition rate.

关键词: InAs quantum dots, molecular beam epitaxy, mode-locked laser, short pulse

Abstract: The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 ℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10-6 Torr (1 Torr=1.33322×102 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ～ 19.7-GHz repetition rate.

Key words: InAs quantum dots, molecular beam epitaxy, mode-locked laser, short pulse

中图分类号:  (Quantum dots)

  • 78.67.Hc
42.55.Px (Semiconductor lasers; laser diodes) 42.60.Fc (Modulation, tuning, and mode locking) 81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)