›› 2014, Vol. 23 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/23/10/107302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Analysis of optoelectronic properties of TiO2 nanowiers/Si heterojunction arrays

Saeideh Ramezani Sani   

  1. Department of Physics, Roudehen Branch, Islamic Azad University, Roudehen, Iran
  • 收稿日期:2013-10-25 修回日期:2014-02-19 出版日期:2014-10-15 发布日期:2014-10-15

Analysis of optoelectronic properties of TiO2 nanowiers/Si heterojunction arrays

Saeideh Ramezani Sani   

  1. Department of Physics, Roudehen Branch, Islamic Azad University, Roudehen, Iran
  • Received:2013-10-25 Revised:2014-02-19 Online:2014-10-15 Published:2014-10-15
  • Contact: Saeideh Ramezani Sani E-mail:ramezanisani@yahoo.com,_ramezani@riau.ac.ir
  • About author:73.40.Kp; 73.40.lq; 73.50.pz; 78.67.-n

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摘要： The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet (UV) illumination. n-TiO2NW/p-Si has a p-n junction formed in the n-TiO2/p-Si heterojunction. TiO2NW/Si photodiode produces a photocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.

关键词: TiO2 nanowires, photoresponse, I-V characteristics, heterojunction

Abstract: The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet (UV) illumination. n-TiO2NW/p-Si has a p-n junction formed in the n-TiO2/p-Si heterojunction. TiO2NW/Si photodiode produces a photocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.

Key words: TiO2 nanowires, photoresponse, I-V characteristics, heterojunction

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.50.Pz (Photoconduction and photovoltaic effects) 78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)