Oxide magnetic semiconductors：Materials, properties, and devices

doi:10.1088/1674-1056/22/8/088505

摘要/Abstract

摘要： We give a brief introduction to the oxide (ZnO, TiO₂, In₂O₃, SnO₂, etc.)-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.

关键词: magnetic semiconductors, ferromagnetism, spintronics, magnetic, transport, optical

Abstract: We give a brief introduction to the oxide (ZnO, TiO₂, In₂O₃, SnO₂, etc.)-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.

Key words: magnetic semiconductors, ferromagnetism, spintronics, magnetic, transport, optical

中图分类号:

85.75-d

75.50.Pp (Magnetic semiconductors) 75.47.Lx (Magnetic oxides) 75.70.-i (Magnetic properties of thin films, surfaces, and interfaces)

田玉峰, 胡树军, 颜世申, 梅良模. Oxide magnetic semiconductors：Materials, properties, and devices[J]. 中国物理B, 2013, 22(8): 88505-088505.

Tian Yu-Feng (田玉峰), Hu Shu-Jun (胡树军), Yan Shi-Shen (颜世申), Mei Liang-Mo (梅良模). Oxide magnetic semiconductors：Materials, properties, and devices[J]. Chin. Phys. B, 2013, 22(8): 88505-088505.

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