Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

doi:10.1088/1674-1056/22/5/057105

中国物理B ›› 2013, Vol. 22 ›› Issue (5): 57105-057105.doi: 10.1088/1674-1056/22/5/057105

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

刘波^a, 张森^b, 尹甲运^a, 张雄文^a, 敦少博^a, 冯志红^a, 蔡树军^a

a Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637371, Singapore

收稿日期:2012-10-10 修回日期:2012-10-25 出版日期:2013-04-01 发布日期:2013-04-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60876009).

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

Liu Bo (刘波)^a, Zhang Sen (张森)^b, Yin Jia-Yun (尹甲运)^a, Zhang Xiong-Wen (张雄文)^a, Dun Shao-Bo (敦少博)^a, Feng Zhi-Hong (冯志红)^a, Cai Shu-Jun (蔡树军)^a

a Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637371, Singapore

Received:2012-10-10 Revised:2012-10-25 Online:2013-04-01 Published:2013-04-01
Contact: Liu Bo E-mail:liub.hsri@foxmail.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60876009).

摘要/Abstract

摘要： The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer's thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated. The characteristics of AlN epilayers are analyzed by using triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM). It is shown that the crystal quality of the AlN epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-AlN buffer layer. We find that the optimal HT-AlN buffer thickness for obtaining a high-quality AlN epilayer grown on sapphire substrate is about 20 nm.

关键词: AlN epilayer, high-temperature (HT) buffer, atomic force microscopy (AFM), dislocation

Abstract: The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer's thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated. The characteristics of AlN epilayers are analyzed by using triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM). It is shown that the crystal quality of the AlN epilayer is closely related to its correlation length. The correlation length is determined by the thickness of the initially grown HT-AlN buffer layer. We find that the optimal HT-AlN buffer thickness for obtaining a high-quality AlN epilayer grown on sapphire substrate is about 20 nm.

Key words: AlN epilayer, high-temperature (HT) buffer, atomic force microscopy (AFM), dislocation

中图分类号: (III-V semiconductors)

71.55.Eq

78.66.Fd (III-V semiconductors) 73.21.Ac (Multilayers)

刘波, 张森, 尹甲运, 张雄文, 敦少博, 冯志红, 蔡树军. Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition[J]. 中国物理B, 2013, 22(5): 57105-057105.

Liu Bo (刘波), Zhang Sen (张森), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Dun Shao-Bo (敦少博), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军). Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition[J]. Chin. Phys. B, 2013, 22(5): 57105-057105.

参考文献 17

[1]	Li D B, Hu W G, Miyake H, Hiramatsu K and Song H 2010 Chin. Phys. B 19 127801
[2]	Speck J S and Rosner S J 1999 Physica B 273 24
[3]	Ye H, Lu P F, Yu Z Y, Yao W J, Chen Z H, Jia B Y and Liu Y M 2010 Chin. Phys. B 19 047302
[4]	Paduano Q S, Weyburne D W, Jasinski J and Liliental-Weber Z 2004 J. Cryst. Growth 261 259
[5]	Takeuchi M, Shimizu H, Kajitani R, Kawasaki K, Kumagai Y, Koukitu A and Aoyagi Y 2007 J. Cryst. Growth 298 336
[6]	Chen G F, Yang H, Wu Y X, Zhu J J, Zhang S M, Tiang D S, Liu Z S, Zhao D G, Wang H and Wang Y T 2010 Chin. Phys. B 19 036801
[7]	Taniyasu Y, Kasu M and Makimoto T 2007 J. Cryst. Growth 298 310
[8]	Ren F, Hao Z B, Hu J N, Zhang C and Luo Y 2010 Chin. Phys. B 19 117101
[9]	Pantha B N, Dahal R, Nakarmi M L, Nepal N, Li J, Lin J Y, Jiang H X, Paduano Q S and Weyburne D 2007 Appl. Phys. Lett. 90 241101
[10]	Lee S R, West A M, Allerman A A, Waldrip K E, Follstaedt D M, Provencio P P, Koleske D D and Abernathy C R 2005 Appl. Phys. Lett. 86 241904
[11]	Dunn C G and Koch E F 1957 Acta Metall. 5 548
[12]	Zhao Y P, Wang G C and Lu T M 2001 Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications (New York: Academic Press)
[13]	Pelliccione M, Karrbacak T, Gairre C, Wang G C and Lu T M 2006 Phys. Rev. B 74 125420
[14]	Biscarini F, Samori P, Greco O and Zamboni R 1997 Phys. Rev. Lett. 78 2389
[15]	Imura M, Nakano K, Fujimoto N, Okada N, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Noro T, Takagi T and Bandoh A 2007 Jpn. J. Appl. Phys. 46 1458
[16]	Imura M, Sugimura H, Okada N, Iwaya M, Kamiyama S, Amano H, Akasaki I and Bando A 2008 Phys. Stat. Sol. (c). 5 1582
[17]	Zhao D G, Zhu J J, Liu Z S, Zhang S M, Yang H and Jiang D S 2004 Appl. Phys. Lett. 85 1499

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

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