Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

doi:10.1088/1674-1056/22/4/048101

中国物理B ›› 2013, Vol. 22 ›› Issue (4): 48101-048101.doi: 10.1088/1674-1056/22/4/048101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

陈夏, 梁柱洪, 陈湛旭, 杨伟明, 陈土福, 金崇君, 张佰君

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

收稿日期:2012-07-18 修回日期:2012-10-12 出版日期:2013-03-01 发布日期:2013-03-01
基金资助:
Project supported by the the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the New Century Excellent Talents in University, and the National Basic Research Program of China (Grant No. 2010CB923200).

Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

Chen Xia (陈夏), Liang Zhu-Hong (梁柱洪), Chen Zhan-Xu (陈湛旭), Yang Wei-Ming (杨伟明), Chen Tu-Fu (陈土福), Jin Chong-Jun (金崇君), Zhang Bai-Jun (张佰君)

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Received:2012-07-18 Revised:2012-10-12 Online:2013-03-01 Published:2013-03-01
Contact: Jin Chong-Jun, Zhang Bai-Jun E-mail:jinchjun@mail.sysu.edu.cn; zhbaij@mail.sysu.edu.cn
Supported by:
Project supported by the the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the New Century Excellent Talents in University, and the National Basic Research Program of China (Grant No. 2010CB923200).

摘要/Abstract

摘要： We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes (LEDs) by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.

关键词: colloidal lithography, light-emitting diode, extraction efficiency

Abstract: We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes (LEDs) by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.

Key words: colloidal lithography, light-emitting diode, extraction efficiency

中图分类号: (Specific materials: fabrication, treatment, testing, and analysis)

81.05.-t

85.30.-z (Semiconductor devices) 42.55.Tv (Photonic crystal lasers and coherent effects)

陈夏, 梁柱洪, 陈湛旭, 杨伟明, 陈土福, 金崇君, 张佰君. Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes[J]. 中国物理B, 2013, 22(4): 48101-048101.

Chen Xia (陈夏), Liang Zhu-Hong (梁柱洪), Chen Zhan-Xu (陈湛旭), Yang Wei-Ming (杨伟明), Chen Tu-Fu (陈土福), Jin Chong-Jun (金崇君), Zhang Bai-Jun (张佰君). Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes[J]. Chin. Phys. B, 2013, 22(4): 48101-048101.

参考文献 25

[1]	Horng R H, Tsai Y L, Wu T M, Wuu D S and Chao C H 2009 IEEE J. Sel. Top. Quantum Electron. 15 1327
[2]	Lee Y C, Ni C H and Chen C Y 2010 Opt. Express 18 A489
[3]	Schubert E F and Kim J K 2005 Science 308 1274
[4]	Steigerwald D A, Bhat J C, Collins D, Fletcher R M, Holcomb M O, Ludowise M J, Martin P S and Rudaz S L 2002 IEEE J. Sel. Top. Quantum Electron. 8 310
[5]	Schubert E F 2006 Light-Emitting Diodes 2nd edn. (Cambridge: Cambridge University Press)
[6]	Huang C Y, Ku H M, Liao C Z and Chao S 2010 Opt. Express 18 10674
[7]	Lai W C, Yang Y Y, Peng L C, Yang S W, Lin Y R and Sheu J K 2010 Appl. Phys. Lett. 97 081103
[8]	Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P and Nakamura S 2004 Appl. Phys. Lett. 84 855
[9]	Kim T S, Kim S M, Jang Y H and Jung G Y 2007 Appl. Phys. Lett. 91 171114
[10]	Byeon K J, Hong E J, Park H, Yang K Y, Baek J H, Jhin J, Hong C H, Kim H G and Lee H 2009 Semicond. Sci. Technol. 24 105004
[11]	Park H, Byeon K J, Yang K Y, Cho J Y and Lee H 2010 Nanotechnology 21 355304
[12]	Sim J I, Lee B G, Yang J W, Yoon H D and Kim T G 2011 Jpn. J. Appl. Phys. 50 102101
[13]	An H M, Sim J I, Shin K S, Sung Y M and Kim T G 2012 IEEE J. Quantum Electron. 48 891
[14]	Liu S H, Feng Y C, Niu H B and Li Y 2006 Chin. Phys. B 15 702
[15]	Li Y, Zheng R S, Feng Y C, Liu S H and Niu H B 2006 Chin. Phys. 15 1009
[16]	Baik K H, Min B K, Kim J Y, Kim H K, Sone C, Park Y and Kim H 2010 J. Appl. Phys. 108 063105
[17]	Lin C C and Lee C T 2010 IEEE Photon. Technol. Lett. 22 1132
[18]	Kao C C, Su Y K, Lin C L and Chen J J 2010 Appl. Phys. Lett. 97 023111
[19]	Huang H W, Huang J K, Kuo S Y, Lee K Y and Kuo H C 2010 Appl. Phys. Lett. 96 263115
[20]	Kim D H, Cho C O, Roh Y G, Jeon H, Park Y S, Cho J, Im J S, Sone C, Park Y, Choi W J and Park Q H 2005 Appl. Phys. Lett. 87 203508
[21]	Kim S H, Lee K D, Kim J Y, Kwon M K and Park S J 2007 Nanotechnology 18 055306
[22]	Ke M Y, Wang C Y, Chen L Y, Chen H H, Chiang H L, Cheng Y W, Hsieh M Y, Chen C P and Huang J J 2009 IEEE J. Sel. Top. Quantum Electron. 15 1242
[23]	Kempa K, Kimball B, Rybczynski J, Huang Z P, Wu P F, Steeves D, Sennett M, Giersig M, Rao D, Carnahan D L, Wang D Z, Lao J Y, Li W Z and Ren Z F 2003 Nano Lett. 3 13
[24]	Song Y M and Lee Y T 2009 Proceedings of 9th International Conference on Numerical Simulation of Optoelectronic Devices p. 103
[25]	Li Y, Zhang J and Yang B 2010 Nano Today 5 117

Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

Tuning nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

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