Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 48102-048102.doi: 10.1088/1674-1056/22/4/048102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

李新坤, 金鹏, 梁德春, 吴巨, 王占国   

  1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2012-06-07 修回日期:2012-10-18 出版日期:2013-03-01 发布日期:2013-03-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086).

InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

Li Xin-Kun (李新坤), Jin Peng (金鹏), Liang De-Chun (梁德春), Wu Ju (吴巨), Wang Zhan-Guo (王占国)   

  1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2012-06-07 Revised:2012-10-18 Online:2013-03-01 Published:2013-03-01
  • Contact: Jin Peng E-mail:pengjin@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086).

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摘要： With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970 nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800 mA, an output power of 18.5 mW, and the single Gaussian-like emission spectrum centred at 972 nm with a full width at half maximum of 18 nm are obtained.

关键词: quantum dot, submonolayer, self-assembled, superluminescent diode

Abstract: With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970 nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800 mA, an output power of 18.5 mW, and the single Gaussian-like emission spectrum centred at 972 nm with a full width at half maximum of 18 nm are obtained.

Key words: quantum dot, submonolayer, self-assembled, superluminescent diode

中图分类号:  (Quantum dots)

  • 81.07.Ta
81.16.Dn (Self-assembly) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.60.Jb (Light-emitting devices)