中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117310-117310.doi: 10.1088/1674-1056/22/11/117310

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal–insulator–semiconductor) structures

T. Ataseven, A. Tataroğlu   

  1. Physics Department, Faculty of Sciences, Gazi University, Teknikokullar, Ankara 06500, Turkey
  • 收稿日期:2013-01-20 修回日期:2013-05-07 出版日期:2013-09-28 发布日期:2013-09-28
  • 基金资助:
    Projected supported by Gazi University Scientific Research Project (BAP), FEF. 05/2012-15.

Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal–insulator–semiconductor) structures

T. Ataseven, A. Tataroğlu   

  1. Physics Department, Faculty of Sciences, Gazi University, Teknikokullar, Ankara 06500, Turkey
  • Received:2013-01-20 Revised:2013-05-07 Online:2013-09-28 Published:2013-09-28
  • Contact: A. Tataroğlu E-mail:ademt@gazi.edu.tr
  • Supported by:
    Projected supported by Gazi University Scientific Research Project (BAP), FEF. 05/2012-15.

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摘要： The dielectric properties of Au/Si3N4/n-Si (MIS) structures are studied using the admittance measurements (C–V and G/ω–V) each as a function of temperature in a range from 80 K to 400 K for two frequencies (100 kHz and 1 MHz). Experimental results show that both the dielectric constant (ε’) and the dielectric loss (ε") increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity (σac) increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low (120 K–240 K) and high (280 K–400 K) temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.

关键词: Au/Si3N4/n-Si (metal–insulator–semiconductor) structure, admittance measurements, dielectric properties, ac conductivity

Abstract: The dielectric properties of Au/Si3N4/n-Si (MIS) structures are studied using the admittance measurements (C–V and G/ω–V) each as a function of temperature in a range from 80 K to 400 K for two frequencies (100 kHz and 1 MHz). Experimental results show that both the dielectric constant (ε’) and the dielectric loss (ε") increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity (σac) increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low (120 K–240 K) and high (280 K–400 K) temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.

Key words: Au/Si3N4/n-Si (metal–insulator–semiconductor) structure, admittance measurements, dielectric properties, ac conductivity

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 77.22.Ch (Permittivity (dielectric function)) 72.20.-i (Conductivity phenomena in semiconductors and insulators)