Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As

doi:10.1088/1674-1056/22/2/027504

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27504-027504.doi: 10.1088/1674-1056/22/2/027504

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As

李炎勇, 汪华锋, 曹玉飞, 王开友

The State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2012-09-18 修回日期:2012-10-17 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB922200); the National Natural Science Foundation of China (Grant No. 11174272); and the Engineering and Physical Sciences Research Council-National Natural Science Foundation Joint (Grant Nos. 10911130232/A0402).

Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As

Li Yan-Yong (李炎勇), Wang Hua-Feng (汪华锋), Cao Yu-Fei (曹玉飞), Wang Kai-You (王开友)

The State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2012-09-18 Revised:2012-10-17 Online:2013-01-01 Published:2013-01-01
Contact: Wang Kai-You E-mail:kywang@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB922200); the National Natural Science Foundation of China (Grant No. 11174272); and the Engineering and Physical Sciences Research Council-National Natural Science Foundation Joint (Grant Nos. 10911130232/A0402).

摘要/Abstract

摘要： We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga_0.94Mn_0.06As devices by measuring the angle-dependent planar Hall resistance (PHR). Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields (below 1000 Gs, 1 Gs=10^-4 T), which can be explained by competition between Zeeman energy and magnetic anisotropic energy. It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga_0.94Mn_0.06As and the annealed one. The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing. This gives a useful way to tune the magnetic anisotropy of ultrathin (Ga,Mn)As devices.

关键词: magnetic anisotropy, planar Hall resistance, ultrathin (Ga, Mn)As

Abstract: We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga_0.94Mn_0.06As devices by measuring the angle-dependent planar Hall resistance (PHR). Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields (below 1000 Gs, 1 Gs=10^-4 T), which can be explained by competition between Zeeman energy and magnetic anisotropic energy. It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga_0.94Mn_0.06As and the annealed one. The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing. This gives a useful way to tune the magnetic anisotropy of ultrathin (Ga,Mn)As devices.

Key words: magnetic anisotropy, planar Hall resistance, ultrathin (Ga,Mn)As

中图分类号: (Magnetic semiconductors)

75.50.Pp

75.30.Gw (Magnetic anisotropy) 75.30.Hx (Magnetic impurity interactions) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport)

李炎勇, 汪华锋, 曹玉飞, 王开友. Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As[J]. 中国物理B, 2013, 22(2): 27504-027504.

Li Yan-Yong (李炎勇), Wang Hua-Feng (汪华锋), Cao Yu-Fei (曹玉飞), Wang Kai-You (王开友). Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As[J]. Chin. Phys. B, 2013, 22(2): 27504-027504.

参考文献 30

[1]	Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S and Iye Y 1996 Appl. Phys. Lett. 69 363
[2]	Matsukura F, Sawicki M, Dietl T, Chiba D and Ohno H 2004 Physica E: Low-dimensional Systems and Nanostructures 21 1032
[3]	Chiba D, Sawicki M, Nishitani Y, Nakatani Y, Matsukura F and Ohno H 2008 Nature 455 515
[4]	Chen L, Yang X, Yang F, Zhao J, Misuraca J, Xiong P and von Molnaár S 2011 Nano Lett. 11 2584
[5]	Myers E B, Ralph D C, Katine J A, Louie R N and Buhrman R A 1999 Science 285 867
[6]	Lee S, Yoo T, Lee H, Khym S, Liu X and K. Furdyna J 2011 Jpn. J. Appl. Phys. 50 04DM02
[7]	Kim J, Shin D Y, Lee S, Liu X and Furdyna J K 2008 Phys. Rev. B 78 075309
[8]	Kim J, Shin D Y, Yoo T, Kim H, Lee S, Liu X and Furdyna J K 2008 J. Appl. Phys. 103 07D101
[9]	Welp U, Vlasko-Vlasov V K, Liu X, Furdyna J K and Wojtowicz T 2003 Phys. Rev. Lett. 90 167206
[10]	Wang K Y, Sawicki M, Edmonds K W, Campion R P, Maat S, Foxon C T, Gallagher B L and Dietl T 2005 Phys. Rev. Lett. 95 217204
[11]	Rushforth A W, Výborný K, King C S, Edmonds K W, Campion R P, Foxon C T, Wunderlich J, Irvine A C, Vašek P, Novák V, Olejník K, Sinova J, Jungwirth T and Gallagher B L 2007 Phys. Rev. Lett. 99 147207
[12]	Stanciu V, Wilhelmsson O, Bexell U, Adell M, Sadowski J, Kanski J, Warnicke P and Svedlindh P 2005 Phys. Rev. B 72 125324
[13]	Edmonds KW, Boguslawski P, Wang K Y, Campion R P, Novikov S N, Farley N R S, Gallagher B L, Foxon C T, Sawicki M, Dietl T, Buongiorno Nardelli M and Bernholc J 2004 Phys. Rev. Lett. 92 037201
[14]	Deng J J, Zhao J H, Jiang C P, Zhang Y, Niu Z C, Yang F H, Wu X G and Zheng H Z 2005 Chin. Phys. Lett. 22 466
[15]	Kim J, Lee H, Yoo T, Lee S, Liu X and Furdyna J K 2011 Phys. Rev. B 84 184407
[16]	Novák V, Olejník K, Wunderlich J, Cukr M, Výborný K, Rushforth A W, Edmonds K W, Campion R P, Gallagher B L, Sinova J and Jungwirth T 2008 Phys. Rev. Lett. 101 077201
[17]	Yu K M, Walukiewicz W, Wojtowicz T, Kuryliszyn I, Liu X, Sasaki Y and Furdyna J K 2002 Phys. Rev. B 65 201303
[18]	Chien C L and Westgate C R 1980 The Hall Effect and Its Applications (California: Plenum Press)
[19]	Dietl T, Matsukura F, Ohno H, Cibert J and Ferrand D 2003 Hall Effect and Magnetoresistance in P-Type Ferromagnetic Semiconductors: Recent Trends in Theory of Physical Phenomena in High Magnetic Fields (Netherlands: Springer) p. 197
[20]	Jungwirth T, Niu Q and MacDonald A H 2002 Phys. Rev. Lett. 88 207208
[21]	Wang K Y, Edmonds K W, Campion R P, Gallagher B L, Farley N R S, Foxon C T, Sawicki M, Boguslawski P and Dietl T 2004 J. Appl. Phys. 95 6512
[22]	Jungwirth T, Wang K Y, Mašek J, Edmonds K W, König J, Sinova J, Polini M, Goncharuk N A, MacDonald A H, Sawicki M, Rushforth A W, Campion R P, Zhao L X, Foxon C T and Gallagher B L 2005 Phys. Rev. B 72 165204
[23]	Tang H X, Kawakami R K, Awschalom D D and Roukes M L 2003 Phys. Rev. Lett. 90 107201
[24]	Kim J, Lee S, Lee S, Liu X and Furdyna J K 2010 Solid State Commun. 150 27
[25]	Limmer W, Daeubler J, Dreher L, Glunk M, Schoch W, Schwaiger S and Sauer R 2008 Phys. Rev. B 77 205210
[26]	Kim J, Yoo T, Chung S, Lee S, Liu X and Furdyna J K 2009 J. Appl. Phys. 105 07C501
[27]	Lee S, Chung J H, Liu X, Furdyna J K and Kirby B J 2009 Materials Today 12 14
[28]	Olejník K, Owen M H S, Novák V, Mašek J, Irvine A C, Wunderlich J and Jungwirth T 2008 Phys. Rev. B 78 054403
[29]	Owen M H S, Wunderlich J, Novák V, Olejník K, Zemen J, Vyborny K, Ogawa S, Irvine A C, Ferguson A J, Sirringhaus H and Jungwirth T 2009 New J. Phys. 11 023008
[30]	Endo M, Chiba D, Shimotani H, Matsukura F, Iwasa Y and Ohno H 2010 Appl. Phys. Lett. 96 022515

Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As

Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As

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