中国物理B ›› 2012, Vol. 21 ›› Issue (7): 78105-078105.doi: 10.1088/1674-1056/21/7/078105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

熊玉卿a, 李兴存b, 陈强b, 雷雯雯b, 赵桥b, 桑利军b, 刘忠伟b, 王正铎b, 杨丽珍b   

  1. a Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China;
    b Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
  • 收稿日期:2011-11-24 修回日期:2012-01-13 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11175024), the Beijing Natural Science Foundation, China (Grant No. 1112012), the Science and Technology on Surface Engineering Laboratory, and the Beijing Education Committee, China (Grant Nos. BM201002, 2011BAD24B01, KM201110015008, KM201010015005, and PHR20110516).

Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

Xiong Yu-Qing(熊玉卿)a), Li Xing-Cun(李兴存)b), Chen Qiang(陈强)b)†, Lei Wen-Wen(雷雯雯)b), Zhao Qiao(赵桥) b), Sang Li-Jun(桑利军) b), Liu Zhong-Wei(刘忠伟)b), Wang Zheng-Duo(王正铎)b), and Yang Li-Zhen(杨丽珍) b)   

  1. a Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China;
    b Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
  • Received:2011-11-24 Revised:2012-01-13 Online:2012-06-01 Published:2012-06-01
  • Contact: Chen Qiang E-mail:lppmchenqiang@hotmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11175024), the Beijing Natural Science Foundation, China (Grant No. 1112012), the Science and Technology on Surface Engineering Laboratory, and the Beijing Education Committee, China (Grant Nos. BM201002, 2011BAD24B01, KM201110015008, KM201010015005, and PHR20110516).

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摘要： Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.

关键词: aluminum, plasma-assisted atomic layer deposition, annealing

Abstract: Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.

Key words: aluminum, plasma-assisted atomic layer deposition, annealing

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
07.57.Ty (Infrared spectrometers, auxiliary equipment, and techniques) 07.79.Lh (Atomic force microscopes) 07.85.Jy (Diffractometers)