中国物理B ›› 2011, Vol. 20 ›› Issue (9): 98101-098101.doi: 10.1088/1674-1056/20/9/098101

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Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy

John Goldsmith1, 杜彦浩2, 吴洁君2, 罗伟科2, 韩彤2, 陶岳彬2, 杨志坚2, 于彤军2, 张国义2   

  1. (1)Beijing Yanyuan Research Centre, Sino Nitride Semiconductor LTD, Beijing 100871, China; (2)Research Centre for Wide-gap Semiconductors, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2011-03-15 修回日期:2011-05-11 出版日期:2011-09-15 发布日期:2011-09-15

Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy

Du Yan-Hao(杜彦浩)a), Wu Jie-Jun(吴洁君)a)†, Luo Wei-Ke(罗伟科)a), John Goldsmithb), Han Tong(韩彤)a), Tao Yue-Bin(陶岳彬)a), Yang Zhi-Jian(杨志坚) a),Yu Tong-Jun(于彤军)a)‡, and Zhang Guo-Yi(张国义)a)   

  1. a Research Centre for Wide-gap Semiconductors, School of Physics, Peking University, Beijing 100871, China; b Beijing Yanyuan Research Centre, Sino Nitride Semiconductor LTD, Beijing 100871, China
  • Received:2011-03-15 Revised:2011-05-11 Online:2011-09-15 Published:2011-09-15

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摘要： Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy (HVPE), and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2D growth modes in metal-organic chemical vapour deposition (MOCVD), provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation method (GVM), developed based on the two strain states, is characterized by growth parameters' gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.

关键词: GaN, hydride vapour phase epitaxy, heteroepitaxy

Abstract: Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy (HVPE), and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2D growth modes in metal-organic chemical vapour deposition (MOCVD), provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation method (GVM), developed based on the two strain states, is characterized by growth parameters' gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.

Key words: GaN, hydride vapour phase epitaxy, heteroepitaxy

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)