InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

doi:10.1088/1674-1056/20/2/028402

中国物理B ›› 2011, Vol. 20 ›› Issue (2): 28402-028402.doi: 10.1088/1674-1056/20/2/028402

InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

王占国¹, 张小宾², 侯奇峰², 殷海波², 陈竑², 王晓亮³, 肖红领³, 杨翠柏³

(1)Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China; (2)Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China; (3)Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 1

收稿日期:2010-04-23 修回日期:2010-09-19 出版日期:2011-02-15 发布日期:2011-02-15
基金资助:
Project supported by Knowledge Innovation Engineering of the Chinese Academy of Sciences (Grant No. YYYJ-0701-02), the National Natural Science Foundation of China (Grant Nos. 60890193 and 60906006), the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604905 and 2010CB327503), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant Nos. ISCAS2008T01, ISCAS2009L01, and ISCAS2009L02).

InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

Zhang Xiao-Bin(张小宾)^a)†, Wang Xiao-Liang(王晓亮)^a)b), Xiao Hong-Ling(肖红领)^a)b), Yang Cui-Bai(杨翠柏)^a)b), Hou Qi-Feng(侯奇峰)^a), Yin Hai-Bo(殷海波)^a), Chen Hong(陈竑)^a), and Wang Zhan-Guo(王占国)^b)

^a Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China; ^bKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

Received:2010-04-23 Revised:2010-09-19 Online:2011-02-15 Published:2011-02-15
Supported by:
Project supported by Knowledge Innovation Engineering of the Chinese Academy of Sciences (Grant No. YYYJ-0701-02), the National Natural Science Foundation of China (Grant Nos. 60890193 and 60906006), the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604905 and 2010CB327503), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant Nos. ISCAS2008T01, ISCAS2009L01, and ISCAS2009L02).

摘要/Abstract

摘要： In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (V_oc) of the device are 0.7 mA/cm², 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of V_oc compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V_oc of an In-rich In_xGa_1-xN solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.

关键词: InGaN, solar cell, multiple quantum wells

Abstract: In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (V_oc) of the device are 0.7 mA/cm², 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of V_oc compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V_oc of an In-rich In_xGa_1-xN solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.

Key words: InGaN, solar cell, multiple quantum wells

中图分类号: (Photoelectric conversion)

84.60.Jt

85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.30.De (Semiconductor-device characterization, design, and modeling)

张小宾, 王晓亮, 肖红领, 杨翠柏, 侯奇峰, 殷海波, 陈竑, 王占国. InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage[J]. 中国物理B, 2011, 20(2): 28402-028402.

Zhang Xiao-Bin(张小宾), Wang Xiao-Liang(王晓亮), Xiao Hong-Ling(肖红领), Yang Cui-Bai(杨翠柏), Hou Qi-Feng(侯奇峰), Yin Hai-Bo(殷海波), Chen Hong(陈竑), and Wang Zhan-Guo(王占国). InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage[J]. Chin. Phys. B, 2011, 20(2): 28402-028402.

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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

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