Electron tunneling in single layer graphene with an energy gap

doi:10.1088/1674-1056/20/2/027201

中国物理B ›› 2011, Vol. 20 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/20/2/027201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Electron tunneling in single layer graphene with an energy gap

徐旭光¹, 徐公杰¹, 曹俊诚¹, 张潮²

(1)Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; (2)School of Engineering Physics, University of Wollongong, New South Wales 2522, Australia

收稿日期:2010-05-13 修回日期:2010-10-08 出版日期:2011-02-15 发布日期:2011-02-15

Electron tunneling in single layer graphene with an energy gap

Xu Xu-Guang(徐旭光)^a), Zhang Chao(张潮)^b), Xu Gong-Jie(徐公杰)^a), and Cao Jun-Cheng(曹俊诚)^a)†

^a Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; ^b School of Engineering Physics, University of Wollongong, New South Wales 2522, Australia

Received:2010-05-13 Revised:2010-10-08 Online:2011-02-15 Published:2011-02-15

摘要/Abstract

摘要： When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy regime. In this paper, we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap. It is found that when the electron is at a zero angle of incidence, the transmission probability as a function of incidence energy has a gap. Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor. The conductance under zero temperature has a gap. The properties of electron transmission may be useful for developing graphene-based nano-electronics.

Abstract: When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy regime. In this paper, we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap. It is found that when the electron is at a zero angle of incidence, the transmission probability as a function of incidence energy has a gap. Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor. The conductance under zero temperature has a gap. The properties of electron transmission may be useful for developing graphene-based nano-electronics.

Key words: graphene, transmission

中图分类号: (General formulation of transport theory)

72.10.Bg

73.23.Ad (Ballistic transport) 73.63.Rt (Nanoscale contacts)

徐旭光, 张潮, 徐公杰, 曹俊诚. Electron tunneling in single layer graphene with an energy gap[J]. 中国物理B, 2011, 20(2): 27201-027201.

Xu Xu-Guang(徐旭光), Zhang Chao(张潮), Xu Gong-Jie(徐公杰), and Cao Jun-Cheng(曹俊诚). Electron tunneling in single layer graphene with an energy gap[J]. Chin. Phys. B, 2011, 20(2): 27201-027201.

参考文献 19

[1]	Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2]	Zhang Y, Tan Y W, Stormer H L and Kim P 2005 Nature (London) 438 201
[3]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature (London) 438 197
[4]	Nair R R, Blake P, Grigorenko A N, Novodelov K S, Booth T J, Stauber T, Peres N M R and Geim A K 2008 Science 320 1308
[5]	Zhang C, Chen L and Ma Z S 2008 Phys. Rev. B 77 241402(R)
[6]	Novoselov K S 2007 Nature Mater. 6 183
[7]	Mikhailov A and Ziegler K 2008 J. Phys.: Condens. Matter 20 384204
[8]	Wright A R, Xu X G, Cao J C and Zhang C 2009 Appl. Phys. Lett. 95 072101
[9]	Xu X G and Cao J C 2010 Mod. Phys. Lett. B 24 2243
[10]	Wright A R, Cao J C and Zhang C 2009 Phys. Rev. Lett. 103 207401
[11]	Katsnelson M I, Novoselov K S and Geim A K 2006 Nature Phys. 2 620
[12]	Chen X and Tao J W 2009 Appl. Phys. Lett. 94 262102
[13]	Pereira J M, Mlinar V, Peeters F M and Vasilopoulos J P 2006 Phys. Rev. B 74 045424
[14]	Pereira J M, Vasilopoulos J P and Peeters F M 2007 Appl. Phys. Lett. 90 132122
[15]	Bai C X and Zhang X D 2007 Phys. Rev. B 76 075430
[16]	Zhou S Y, Gweon G H, Fedorov A V, First P N, Heer W A, Lee D H, Guinea F, Castro A H and Lanzara A 2007 Nature Mater. 6 770
[17]	Zhou S Y, Siegel D A, Fedorov A V, Gabaly F E, Schmid A K, Castro A H, Lee D H and Lanzara A 2008 Nature Mater. 7 259
[18]	Setare M R and Jahani 2010 Physica B 405 1433
[19]	Masir M R, Vasilopoulos P and Peeters F M 2009 Phys. Rev. B 79 035409 endfootnotesize

Electron tunneling in single layer graphene with an energy gap

Electron tunneling in single layer graphene with an energy gap

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