中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87204-087204.doi: 10.1088/1674-1056/19/8/087204

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Angle-sensitive and fast photovoltage of silver nanocluster embeded ZnO thin films induced by 1.064-μm pulsed laser

周庆莉1, 周岳亮2, 赵嵩卿3, 杨立敏3, 刘闻炜3, 赵昆3   

  1. (1)Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China; (2)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (3)Department of Mathematics and Physics, China University of Petroleum (Beijin7), Beijing 102249, China
  • 收稿日期:2009-10-06 修回日期:2010-03-03 出版日期:2010-08-15 发布日期:2010-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60877038, 50672132, 60778034 and 10804077), Program for New Century Excellent Talents in University, Research Fund for the Doctoral Program of the Higher Education of China (Grant No. 200804250006), Key Project of the Chinese Ministry of Education (Grant No. 107020), and the Natural Science Foundation of Beijing (Grant No. 4082026).

Angle-sensitive and fast photovoltage of silver nanocluster embeded ZnO thin films induced by 1.064-μm pulsed laser

Zhao Song-Qing(赵嵩卿)a)†, Yang Li-Min(杨立敏)a), Liu Wen-Wei(刘闻炜)a), Zhao Kun(赵昆)a), Zhou Yue-Liang(周岳亮) b), and Zhou Qing-Li(周庆莉)c)   

  1. a Department of Mathematics and Physics, China University of Petroleum (Beijin7), Beijing 102249, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; c Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China
  • Received:2009-10-06 Revised:2010-03-03 Online:2010-08-15 Published:2010-08-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60877038, 50672132, 60778034 and 10804077), Program for New Century Excellent Talents in University, Research Fund for the Doctoral Program of the Higher Education of China (Grant No. 200804250006), Key Project of the Chinese Ministry of Education (Grant No. 107020), and the Natural Science Foundation of Beijing (Grant No. 4082026).

摘要: Silver nanocluster embedded ZnO composite thin film was observed to have an angle-sensitive and fast photovoltaic effect in the angle range from –90o to 90o, its peak value and the polarity varied regularly with the angle of incidence of the 1.064-μ m pulsed Nd:YAG laser radiation onto the ZnO surface. Meanwhile, for each photovoltaic signal, its rising time reached 2 ns with an open-circuit photovoltage of 2 ns full width at half-maximum. This angle-sensitive fast photovoltaic effect is expected to put this composite film a candidate for angle-sensitive and fast photodetector.

Abstract: Silver nanocluster embedded ZnO composite thin film was observed to have an angle-sensitive and fast photovoltaic effect in the angle range from –90$^\circ$ to 90$^\circ$, its peak value and the polarity varied regularly with the angle of incidence of the 1.064-μm pulsed Nd:YAG laser radiation onto the ZnO surface. Meanwhile, for each photovoltaic signal, its rising time reached 2 ns with an open-circuit photovoltage of 2 ns full width at half-maximum. This angle-sensitive fast photovoltaic effect is expected to put this composite film a candidate for angle-sensitive and fast photodetector.

Key words: angle-sensitive detector, ZnO thin film, silver nanocluster, fast photovoltage

中图分类号:  (Photoconduction and photovoltaic effects)

  • 72.40.+w
61.46.Bc (Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)) 73.50.Pz (Photoconduction and photovoltaic effects) 73.61.Ga (II-VI semiconductors) 81.15.Fg (Pulsed laser ablation deposition)