Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

doi:10.1088/1674-1056/19/12/127801

中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127801-127801.doi: 10.1088/1674-1056/19/12/127801

Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs

胡卫国¹, 三宅秀人¹, 平松和政¹, 黎大兵², 宋航²

(1)Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan; (2)Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

收稿日期:2010-01-27 修回日期:2010-02-19 出版日期:2010-12-15 发布日期:2010-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60976011), the Knowledge Innovation Program of CIOMP (Grant No. 08CY32M080), the Akasaki Research Center at Nagoya University, Japan, the Grants-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant Nos. 18360008 and 18560010), and the Scientific Research on Priority Areas of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant No. 18069006).

Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs

Li Da-Bing(黎大兵)^a)b)†, Hu Wei-Guo(胡卫国)^b), Miyake Hideto(三宅秀人)^b), Hiramatsu Kazumasa(平松和政)^b), and Song Hang(宋航)^a)

^a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; ^b Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

Received:2010-01-27 Revised:2010-02-19 Online:2010-12-15 Published:2010-12-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60976011), the Knowledge Innovation Program of CIOMP (Grant No. 08CY32M080), the Akasaki Research Center at Nagoya University, Japan, the Grants-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant Nos. 18360008 and 18560010), and the Scientific Research on Priority Areas of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant No. 18069006).

摘要/Abstract

摘要： Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.

Abstract: Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.

Key words: nitride, quantum wells, optical properties, luminescence

中图分类号: (Defects and impurities: doping, implantation, distribution, concentration, etc.)

68.55.Ln

78.40.Fy (Semiconductors) 78.60.Hk (Cathodoluminescence, ionoluminescence) 78.67.De (Quantum wells) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)

黎大兵, 胡卫国, 三宅秀人, 平松和政, 宋航. Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs[J]. 中国物理B, 2010, 19(12): 127801-127801.

Li Da-Bing(黎大兵), Hu Wei-Guo(胡卫国), Miyake Hideto(三宅秀人), Hiramatsu Kazumasa(平松和政), and Song Hang(宋航). Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs[J]. Chin. Phys. B, 2010, 19(12): 127801-127801.

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Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs

Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs

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