Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

doi:10.1088/1674-1056/19/11/117303

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117303-117305.doi: 10.1088/1674-1056/19/11/117303

Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

冀子武¹, 郑雨军¹, 徐现刚²

(1)School of Physics, Shandong University, Jinan 250100, China; (2)State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2010-03-17 修回日期:2010-06-22 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10844003 and 10874101), the Natural Science Foundation of Shandong Province, China (Grant No. Y2008A10), and the National Basic Research Program of China (Grant No. 2009CB930503).

Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

Ji Zi-Wu(冀子武)^a)^†, Zheng Yu-Jun(郑雨军)^a), and Xu Xian-Gang(徐现刚)^b)

^a School of Physics, Shandong University, Jinan 250100, China; ^b State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2010-03-17 Revised:2010-06-22 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10844003 and 10874101), the Natural Science Foundation of Shandong Province, China (Grant No. Y2008A10), and the National Basic Research Program of China (Grant No. 2009CB930503).

摘要/Abstract

摘要： We have studied the cyclotron-resonance absorption and photoluminescence properties of the modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells. It is shown that only the doped sample shows electron cyclotron-resonance absorption. Also, the undoped sample shows two distinctive peaks in the spatially indirect photoluminescence spectra, and the doped one shows only one peak. The results reveal that the high concentration electrons accumulated in ZnSe quantum well layers from n-doped layers can tunnel through BeTe barrier from one well layer to the other. The electron concentration difference between these two well layers originating from the tunneling results in a new additional electric field, and can cancel out a built-in electric field as observed in the undoped structures.

Abstract: We have studied the cyclotron-resonance absorption and photoluminescence properties of the modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells. It is shown that only the doped sample shows electron cyclotron-resonance absorption. Also, the undoped sample shows two distinctive peaks in the spatially indirect photoluminescence spectra, and the doped one shows only one peak. The results reveal that the high concentration electrons accumulated in ZnSe quantum well layers from n-doped layers can tunnel through BeTe barrier from one well layer to the other. The electron concentration difference between these two well layers originating from the tunneling results in a new additional electric field, and can cancel out a built-in electric field as observed in the undoped structures.

Key words: type-II quantum wells, cyclotron resonance, photoluminescence, electron tunneling

中图分类号: (Tunneling)

73.40.Gk

73.63.Hs (Quantum wells) 78.55.Et (II-VI semiconductors) 78.67.De (Quantum wells)

冀子武, 郑雨军, 徐现刚. Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells[J]. 中国物理B, 2010, 19(11): 117303-117305.

Ji Zi-Wu(冀子武), Zheng Yu-Jun(郑雨军), and Xu Xian-Gang(徐现刚). Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells[J]. Chin. Phys. B, 2010, 19(11): 117303-117305.

参考文献 26

[1]	Gao H L, Zeng Y P, Wang B Q, Zhu Z P and Wang Z G 2008 it Chin. Phys. B 17 1119
[2]	Cen L B, Shen B, Qin Z X and Zhang G Y 2009 Chin. Phys. B 18 3905
[3]	Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T and Yang H 2010 Chin. Phys. B 19 017307
[4]	Li S M, Zheng W M, Song Y X, Liu J and Chu N N 2009 Chin. Phys. B 18 3975
[5]	Hao G D, Ban S L and Jia X M 2007 Chin. Phys. 16 3766
[6]	Waag A, Fischer F, Sch"ull K, Baron T, Lugauer H J, Litz Th, Zehnder U, Ossau W, Gerhard T, Keim M, Reuscher G and Landwehr G 1997 Appl. Phys. Lett. 70 280
[7]	Maksimov A A, Zaitsev S V, Tartakovskii I I, Kulakovskii V D, Yakovlev D R, Ossau W, Keim M, Reuscher G, Waag A and Landwehr G 1999 Appl. Phys. Lett. 75 1231
[8]	Zaitsev S V, Maksimov A A, Dorozhkin P S, Kulakovskii V D, Tartakovskii I I, Yakovlev D R, Ossau W, Hansen L, Landwehr G and Waag A 2002 Phys. Rev. B 66 245310
[9]	Krebs O and Voisin P 1996 Phys. Rev. Lett. 77 1829
[10]	Maksimov A A, Zaitsev S V, Tartakovskii I I, Kulakovskii V D, Gippius N A, Yakovlev D R, Ossau W, Reuscher G, Waag A and Landwehr G 2000 Phys. Status Solidi B 221 523
[11]	Zaitsev S V, Maksimov A A, Kulakovskii V D, Tartakovskii I I, Yakovlev D R, Ossau W, Hansen L Landwehr G and Waag A 2002 J. Appl. Phys. 91 652
[12]	Butov L V and Filin A I 1998 Phys. Rev. B 58 1980
[13]	Mino H, Fujikawa A, Akimoto R and Takeyama S 2004 Physica E 22 640
[14]	Kim T W, Choo D C, Yoo K H, Meining C J and McCombe B D 2004 Solid State Commun. 129 533
[15]	Ji Z W, Mino H, Oto K, Akimoto R, Ono K and Takeyama S 2006 Semicond. Sci. Technol. 21 87
[16]	Khodaparast G A, Meyer R C, Zhang X H, Kasturiarachchi T, Doezema R E, Chung S J, Goel N, Santos M B and Wang Y J 2004 it Physica E 20 386
[17]	Kotera N, Arimoto H, Miura N, Shibata K, Ueki Y, Tanaka K, Nakamura H, Mishima T, Aiki K and Washima M 2001 Physica E 11 219
[18]	Ji Z W, Takeyama S, Mino H, Oto K, Muro K and Akimoto R 2008 Appl. Phys. Lett. 92 093107
[19]	Ji Z W, Yamamoto H, Mino H, Akimoto R and Takeyama S 2004 it Physica E 22 632
[20]	Najda S P, Yokoi H, Takeyama S, Miura N and Pfeffer P 1991 it Phys. Rev. B 44 1087
[21]	Najda S P, Takeyama S, Miura N, Pfeffer P and Zawadzki W 1989 Phys. Rev. B 40 6189
[22]	Momose H, Okai H, Deguchi H, Mori N and Takeyama S 2006 it Physica E 32 309
[23]	Astakhov G V, Yakovlev D R, Kochereshko V P, Ossau W, Faschinger W, Puls J, Henneberger F, Crooker S A, McCulloch Q, Wolverson D, Gippius N A and Waag A 2002 Phys. Rev. B 65 165335
[24]	Nagelstrasser M, Dr"oge H, Steinr"uck H -P Fischer F, Litz T, Waag A and Landwehr G Fleszar A and Hanke W 1998 Phys. Rev. B 58 10394
[25]	Walsh D, Mazuruk K and Benzaquen M 1987 Phys. Rev. B 36 2883
[26]	Ukita M, Hiei F, Nakano K and Ishibashi A 1995 Appl. Phys. Lett. 66 209

Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 26

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yi Zhu(朱翊), Hongliang Lv(吕红亮), Yuming Zhang(张玉明), Ziji Jia(贾紫骥), Jiale Sun(孙佳乐), Zhijun Lyu(吕智军), and Bin Lu(芦宾). MoS₂/Si tunnel diodes based on comprehensive transfer technique[J]. 中国物理B, 2023, 32(1): 18501-018501.
[2]	Rui-Shu Yang(杨睿姝), Ding-Bang Wang(王定邦), Yang Zhao(赵阳), Shuan-Hu Wang(王拴虎), and Ke-Xin Jin(金克新). Large positive magnetoresistance in photocarrier-doped potassium tantalites[J]. 中国物理B, 2022, 31(12): 127302-127302.
[3]	Liang-Zhong Lin(林亮中), Yi-Yun Ling(凌艺纭), Dong Zhang(张东), and Zhen-Hua Wu(吴振华). Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface[J]. 中国物理B, 2022, 31(11): 117201-117201.
[4]	张文婷, 王粉霞, 李玉苗, 郭小星, 杨建红. Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer[J]. 中国物理B, 2019, 28(8): 86801-086801.
[5]	王国才, 吴良妹, 严佳浩, 周璋, 马瑞松, 杨海方, 李俊杰, 顾长志, 鲍丽宏, 杜世萱, 高鸿钧. Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices[J]. 中国物理B, 2018, 27(7): 77303-077303.
[6]	何格, 魏忠旭, Jérémy Brisbois, 贾艳丽, 黄裕龙, 周花雪, 倪顺利, Alejandro V Silhanek, 单磊, 朱北沂, 袁洁, 董晓莉, 周放, 赵忠贤, 金魁. Distinction between critical current effects and intrinsic anomalies in the point-contact Andreev reflection spectra of unconventional superconductors[J]. 中国物理B, 2018, 27(4): 47403-047403.
[7]	李传新, 汪萨克, 汪军. Enhancement of subgap conductance in a graphene superconductor junction by valley polarization[J]. 中国物理B, 2017, 26(2): 27304-027304.
[8]	Javad Vahedi, Sahar Ghasab Satoory. Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect[J]. 中国物理B, 2017, 26(2): 28503-028503.
[9]	M Bati, S Sakiroglu, I Sokmen. Electron transport in electrically biased inverse parabolic double-barrier structure[J]. 中国物理B, 2016, 25(5): 57307-057307.
[10]	马俊杰, 王登京, 黄海林, 汪汝武, 李云宝. Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction[J]. 中国物理B, 2015, 24(10): 107102-107102.
[11]	王品之, 朱素华, 潘涛, 吴银忠. Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes[J]. , 2015, 24(2): 27301-027301.
[12]	刘念, 罗小光, 章毛连. Solid-state resonant tunneling thermoelectric refrigeration in the cylindrical double-barrier nanostructure[J]. , 2014, 23(8): 80502-080502.
[13]	王登京, 马俊杰, 王妹, 汪汝武, 李云宝. Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction[J]. 中国物理B, 2014, 23(5): 57202-057202.
[14]	邓伟胤, 朱瑞, 肖运昌, 邓文基. Resonant tunneling through double-barrier structures on graphene[J]. Chin. Phys. B, 2014, 23(1): 17202-017202.
[15]	孙立风, 董利民, 吴志芳, 房超. A comparison of the transport properties of bilayer graphene, monolayer graphene, and two-dimensional electron gas[J]. 中国物理B, 2013, 22(7): 77201-077201.