中国物理B ›› 2009, Vol. 18 ›› Issue (6): 2610-2615.doi: 10.1088/1674-1056/18/6/081

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Effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

王彩凤1, 李卫兵1, 胡波2, 李清山3   

  1. (1)Department of Physics and Electronic Science, Binzhou University, Binzhou 256603, China; (2)Flying College, Binzhou University, Binzhou 256603, China; (3)Physics Department, Ludong University, Yantai 264025, China
  • 收稿日期:2008-08-23 修回日期:2008-12-10 出版日期:2009-06-20 发布日期:2009-06-20
  • 基金资助:
    Project supported by the Research Foundation for Young Scientists in Innovation Engineering of Binzhou University (Grant No BZXYQNLG200703)

The Effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

Wang Cai-Feng(王彩凤)a)†, Li Qing-Shan(李清山)b), Hu Bo(胡波)c), and Li Wei-Bing(李卫兵)a)   

  1. a Department of Physics and Electronic Science, Binzhou University, Binzhou 256603, China; b Physics Department, Ludong University, Yantai 264025, China; c Flying College, Binzhou University, Binzhou 256603, China
  • Received:2008-08-23 Revised:2008-12-10 Online:2009-06-20 Published:2009-06-20
  • Supported by:
    Project supported by the Research Foundation for Young Scientists in Innovation Engineering of Binzhou University (Grant No BZXYQNLG200703)

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摘要： ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I--V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550~nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I--V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

关键词: photoluminescence, I--V characteristics, annealing

Abstract: ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I--V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550~nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I--V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

Key words: photoluminescence, I--V characteristics, annealing

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
61.72.Cc (Kinetics of defect formation and annealing) 68.55.A- (Nucleation and growth) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.-r (Electrical properties of specific thin films) 81.15.Fg (Pulsed laser ablation deposition)