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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Chuang Wang(王闯), Xiao-Dong Gao(高晓冬), Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Jia-Fan Chen(陈家凡), Xiao-Ming Dong(董晓鸣), Xiaodan Wang(王晓丹), Jun Huang(黄俊), Xiong-Hui Zeng(曾雄辉), and Ke Xu(徐科). Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy[J]. 中国物理B, 2023, 32(2): 26802-026802. |
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Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101. |
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Ningjing Yang(杨柠境), Hai Yang(杨海), and Guojun Jin(金国钧). Interface-induced topological phase and doping-modulated bandgap of two-dimensioanl graphene-like networks[J]. 中国物理B, 2023, 32(1): 17201-017201. |
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Jiafan Chen(陈家凡), Jun Huang(黄俊), Didi Li(李迪迪), and Ke Xu(徐科). Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy[J]. 中国物理B, 2022, 31(7): 76802-076802. |
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Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Introducing voids around the interlayer of AlN by high temperature annealing[J]. 中国物理B, 2022, 31(7): 76104-076104. |
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Pezhman Sheykholeslami-Nasab, Mahdi Davoudi-Darareh, and Mohammad Hassan Yousefi. Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration[J]. 中国物理B, 2022, 31(6): 68504-068504. |
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Linwei Huai(淮琳崴), Yang Luo(罗洋), Samuel M. L. Teicher, Brenden R. Ortiz, Kaize Wang(王铠泽),Shuting Peng(彭舒婷), Zhiyuan Wei(魏志远), Jianchang Shen(沈建昌), Bingqian Wang(王冰倩), Yu Miao(缪宇),Xiupeng Sun(孙秀鹏), Zhipeng Ou(欧志鹏), Stephen D. Wilson, and Junfeng He(何俊峰). Surface-induced orbital-selective band reconstruction in kagome superconductor CsV3Sb5[J]. 中国物理B, 2022, 31(5): 57403-057403. |
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Hongxia Liu(刘虹霞), Xinyue Zhang(张馨月), Wen Li(李文), and Yanzhong Pei(裴艳中). Advances in thermoelectric (GeTe)x(AgSbTe2)100-x[J]. 中国物理B, 2022, 31(4): 47401-047401. |
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Tongyao Wu(吴桐尧), Hongyuan Wang(王洪远), Yuanyuan Yang(杨媛媛), Shaofeng Duan(段绍峰), Chaozhi Huang(黄超之), Tianwei Tang(唐天威), Yanfeng Guo(郭艳峰), Weidong Luo(罗卫东), and Wentao Zhang(张文涛). Determination of the surface states from the ultrafast electronic states in a thermoelectric material[J]. 中国物理B, 2022, 31(2): 27902-027902. |
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Tian-Hui Dong(董天慧), Xu-Dong Zhang(张旭东), Lin-Mei Yang(杨林梅), and Feng Wang(王峰). Effect of structural vacancies on lattice vibration, mechanical, electronic, and thermodynamic properties of Cr5BSi3[J]. 中国物理B, 2022, 31(2): 26101-026101. |
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Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator[J]. 中国物理B, 2022, 31(12): 127701-127701. |
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Wei-Xia Luo(罗伟霞), Xue-Lu Liu(刘雪璐), Xiang-Dong Luo(罗向东), Feng Yang(杨峰), Shen-Jin Zhang(张申金), Qin-Jun Peng(彭钦军), Zu-Yan Xu(许祖彦), and Ping-Heng Tan(谭平恒). Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm[J]. 中国物理B, 2022, 31(11): 110701-110701. |
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Junyu Zong(宗君宇), Yang Xie(谢阳), Qinghao Meng(孟庆豪), Qichao Tian(田启超), Wang Chen(陈望), Xuedong Xie(谢学栋), Shaoen Jin(靳少恩), Yongheng Zhang(张永衡), Li Wang(王利), Wei Ren(任伟), Jian Shen(沈健), Aixi Chen(陈爱喜), Pengdong Wang(王鹏栋), Fang-Sen Li(李坊森), Zhaoyang Dong(董召阳), Can Wang(王灿), Jian-Xin Li(李建新), and Yi Zhang(张翼). Observation of multiple charge density wave phases in epitaxial monolayer 1T-VSe2 film[J]. 中国物理B, 2022, 31(10): 107301-107301. |
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Yunlong Li(李云龙), Chaozhi Huang(黄超之), Guohua Wang(王国华), Jiayuan Hu(胡佳元), Shaofeng Duan(段绍峰), Chenhang Xu(徐晨航), Qi Lu(卢琦), Qiang Jing(景强), Wentao Zhang(张文涛), and Dong Qian(钱冬). Topological Dirac surface states in ternary compounds GeBi2Te4, SnBi2Te4 and Sn0.571Bi2.286Se4[J]. 中国物理B, 2021, 30(12): 127901-127901. |