Anti-control of chaos in p--Ge photoconductor

doi:10.1088/1674-1056/18/12/018

中国物理B ›› 2009, Vol. 18 ›› Issue (12): 5212-5218.doi: 10.1088/1674-1056/18/12/018

Anti-control of chaos in p--Ge photoconductor

冯玉玲, 张喜和

Department of Physics, Changchun University of Science and Technology, Changchun 130022, China

收稿日期:2009-05-17 修回日期:2009-09-15 出版日期:2009-12-20 发布日期:2009-12-20

Anti-control of chaos in p--Ge photoconductor

Feng Yu-Ling(冯玉玲)^†andZhang Xi-He(张喜和)

Department of Physics, Changchun University of Science and Technology, Changchun 130022, China

Received:2009-05-17 Revised:2009-09-15 Online:2009-12-20 Published:2009-12-20

摘要/Abstract

摘要： We present a scheme for the anti-control of chaos in the p--Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this p--Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p--Ge system gradually evolves to fully developed chaotic states.

Abstract: We present a scheme for the anti-control of chaos in the p--Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this p--Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p--Ge system gradually evolves to fully developed chaotic states.

Key words: anti-control of chaos, p--Ge photoconductor, laser, irradiation

中图分类号: (Photoconduction and photovoltaic effects)

72.40.+w

61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 72.20.Ht (High-field and nonlinear effects)

冯玉玲, 张喜和. Anti-control of chaos in p--Ge photoconductor[J]. 中国物理B, 2009, 18(12): 5212-5218.

Feng Yu-Ling(冯玉玲)andZhang Xi-He(张喜和) . Anti-control of chaos in p--Ge photoconductor[J]. Chin. Phys. B, 2009, 18(12): 5212-5218.

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Anti-control of chaos in p--Ge photoconductor

Anti-control of chaos in p--Ge photoconductor

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