中国物理B ›› 2008, Vol. 17 ›› Issue (7): 2557-2561.doi: 10.1088/1674-1056/17/7/036

• CLASSICAL AREAS OF PHENOMENOLOGY • 上一篇    下一篇

Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

廖栽宜, 杨华, 王圩   

  1. State Key Laboratory on Integrated Optoelectronics and Key Laboratory of Semiconductors Materials of Chinese Academy of Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2007-08-21 修回日期:2008-01-07 出版日期:2008-07-09 发布日期:2008-07-09
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 90401025) and the National 973 project (Grant No 2006CB604901).

Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

Liao Zai-Yi(廖栽宜)†, Yang Hua(杨华), and Wang Wei(王圩)   

  1. State Key Laboratory on Integrated Optoelectronics and Key Laboratory of Semiconductors Materials of Chinese Academy of Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2007-08-21 Revised:2008-01-07 Online:2008-07-09 Published:2008-07-09
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 90401025) and the National 973 project (Grant No 2006CB604901).

PDF (PC)

519

赞

摘要： This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

Abstract: This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

Key words: electro-absorption modulator, uni-carrier photodiode, beam propagation method, monolithic integration

中图分类号:  (Waveguides, couplers, and arrays)

  • 42.82.Et
42.79.Hp (Optical processors, correlators, and modulators) 42.81.Qb (Fiber waveguides, couplers, and arrays) 42.82.Cr (Fabrication techniques; lithography, pattern transfer) 85.60.Dw (Photodiodes; phototransistors; photoresistors)