中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2197-2203.doi: 10.1088/1674-1056/17/6/043

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Oxidation of silicon surface with atomic oxygen radical anions

王莲1, 宋崇富1, 孙剑秋1, 李全新1, 侯莹2, 李晓光2   

  1. (1)Department of Chemical Physics, University of Science & Technology of China, Hefei 230026, China; (2)Department of Physics, University of Science & Technology of China, Hefei 230026, China
  • 收稿日期:2007-09-19 修回日期:2007-12-09 出版日期:2008-06-20 发布日期:2008-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50772107) and the National High Technology Development Program of China (Grant No 2006AA05Z118).

Oxidation of silicon surface with atomic oxygen radical anions

Wang Lian(王莲)a), Song Chong-Fu(宋崇富)a), Sun Jian-Qiu(孙剑秋)a), Hou Ying(侯莹)b), Li Xiao-Guang(李晓光)b), and Li Quan-Xin(李全新)a)†   

  1. a Department of Chemical Physics, University of Science & Technology of China, Hefei 230026, China; b Department of Physics, University of Science & Technology of China, Hefei 230026, China
  • Received:2007-09-19 Revised:2007-12-09 Online:2008-06-20 Published:2008-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50772107) and the National High Technology Development Program of China (Grant No 2006AA05Z118).

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摘要： The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O- anions) and the preparation of metal--oxide--semiconductor (MOS) capacitors on the O--oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al28O64]4+.4O- (C12A7-O- for short). After it has been irradiated by an O- anion beam (0.5\mu A/cm2) at 3000C for 1--10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32nm. X-ray photoelectron spectroscopy (XPS) results reveal that the oxide layer is of a mixture of SiO2, Si2O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of x/Si> are investigated by measuring capacitance-voltage (C-V) and current-voltage (I-V) curves. The oxide charge density is about 6.0 \times 1011cm2 derived from the C-V curves. The leakage current density is in the order of 10-6A/cm2 below 4MV/cm, obtained from the $I-V$ curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.

关键词: O- anions, silicon oxidation, MOS capacitor, electrical properties

Abstract: The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O- anions) and the preparation of metal--oxide--semiconductor (MOS) capacitors on the O--oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al28O64]4+$\cdot$4O- (C12A7-O- for short). After it has been irradiated by an O- anion beam (0.5$\mu$ A/cm2) at 300℃ for 1--10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32nm. X-ray photoelectron spectroscopy (XPS) results reveal that the oxide layer is of a mixture of SiO2, Si2O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of <Al electrode/SiOx/Si> are investigated by measuring capacitance-voltage (C-V) and current-voltage (I-V) curves. The oxide charge density is about 6.0 $\times$ 1011cm2 derived from the C-V curves. The leakage current density is in the order of 10-6A/cm2 below 4MV/cm, obtained from the $I-V$ curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.

Key words: O- anions, silicon oxidation, MOS capacitor, electrical properties

中图分类号:  (Oxidation)

  • 81.65.Mq
79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 84.32.Tt (Capacitors) 85.30.Tv (Field effect devices)