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Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Effects of preparation parameters on growth and properties of β-Ga2O3 film[J]. 中国物理B, 2023, 32(1): 17301-017301. |
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Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature[J]. 中国物理B, 2023, 32(1): 18101-018101. |
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Shijun Qin(覃湜俊), Bowen Zhou(周博文), Zhehong Liu(刘哲宏), Xubin Ye(叶旭斌), Xueqiang Zhang(张雪强), Zhao Pan(潘昭), and Youwen Long(龙有文). Slight Co-doping tuned magnetic and electric properties on cubic BaFeO3 single crystal[J]. 中国物理B, 2022, 31(9): 97503-097503. |
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Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Radiation effects of 50-MeV protons on PNP bipolar junction transistors[J]. 中国物理B, 2022, 31(2): 28502-028502. |
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Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君). Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors[J]. 中国物理B, 2022, 31(11): 117302-117302. |
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Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳). Achieving high-performance multilayer MoSe2 photodetectors by defect engineering[J]. 中国物理B, 2021, 30(8): 87801-087801. |
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Xue-Yan Wang(王雪岩), Hu Wang(王虎), Luo-Ran Chen(陈烙然), Yu-Chuan Shao(邵宇川), and Jian-Da Shao(邵建达). Suppression of ion migration in perovskite materials by pulse-voltage method[J]. 中国物理B, 2021, 30(11): 118104-118104. |
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Zhenxing Liu(刘振兴), Liuan Li(李柳暗), Jinwei Zhang(张津玮), Qianshu Wu(吴千树), Yapeng Wang(王亚朋), Qiuling Qiu(丘秋凌), Zhisheng Wu(吴志盛), and Yang Liu(刘扬). Understanding of impact of carbon doping on background carrier conduction in GaN[J]. 中国物理B, 2021, 30(10): 107201-107201. |
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谭志中, 谭震. Electrical properties of m×n cylindrical network[J]. 中国物理B, 2020, 29(8): 80503-080503. |
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张宝庆, 刘高鹏, 宗海涛, 付丽歌, 魏志飞, 杨晓炜, 曹国华. Influence of Zr50Cu50 thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films[J]. 中国物理B, 2020, 29(3): 37303-037303. |
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徐辉, 刘建军, 叶海涛, D J Coathup, A V Khomich, 胡晓君. Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films[J]. 中国物理B, 2018, 27(9): 96104-096104. |
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胡廷静, 崔晓岩, 王婧姝, 张俊凯, 李雪飞, 杨景海, 高春晓. Transport properties of mixing conduction in CaF2 nanocrystals under high pressure[J]. 中国物理B, 2018, 27(1): 16401-016401. |
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张延清, 霍明学, 吴宜勇, 孙承月, 赵慧杰, 耿洪滨, 王帅, 刘如彬, 孙强. Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation[J]. 中国物理B, 2017, 26(8): 88801-088801. |
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崔晓岩, 胡廷静, 王婧姝, 张俊凯, 李雪飞, 杨景海, 高春晓. High pressure electrical transport behavior in SrF2 nanoplates[J]. 中国物理B, 2017, 26(4): 46401-046401. |
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H M Zeyada, F M El-Taweel, M M El-Nahass, M M El-Shabaan. Effect of substitution group on dielectric properties of 4H-pyrano [3, 2-c] quinoline derivatives thin films[J]. 中国物理B, 2016, 25(7): 77701-077701. |