中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2204-2207.doi: 10.1088/1674-1056/17/6/044
Takamura K1, 陈鹏2
Chen Peng(陈鹏)a)b)† and Takamura Kb)
摘要: This paper reports that 9\,nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment $3.09\pm 0.15\,\mu_{\rm B}$ per CrAs unit. The temperature dependence of zb-CrAs resistance $R$ shows metallic behaviour.
中图分类号: (Saturation moments and magnetic susceptibilities)