中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88801-088801.doi: 10.1088/1674-1056/26/8/088801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation

Yan-Qing Zhang(张延清), Ming-Xue Huo(霍明学), Yi-Yong Wu(吴宜勇), Cheng-Yue Sun(孙承月), Hui-Jie Zhao(赵慧杰), Hong-Bin Geng(耿洪滨), Shuai Wang(王帅), Ru-Bin Liu(刘如彬), Qiang Sun(孙强)   

  1. 1 School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China;
    2 Research Center of Basic Space Science, Harbin Institute of Technology, Harbin 150001, China;
    3 The 18th Research Institute of China Electronics Technology Group Corporation, Tianjin 300381, China
  • 收稿日期:2017-03-04 修回日期:2017-04-21 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Yi-Yong Wu E-mail:wuyiyong@hit.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 11475049).

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation

Yan-Qing Zhang(张延清)1, Ming-Xue Huo(霍明学)2, Yi-Yong Wu(吴宜勇)1,2, Cheng-Yue Sun(孙承月)2, Hui-Jie Zhao(赵慧杰)1, Hong-Bin Geng(耿洪滨)1, Shuai Wang(王帅)3, Ru-Bin Liu(刘如彬)3, Qiang Sun(孙强)3   

  1. 1 School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China;
    2 Research Center of Basic Space Science, Harbin Institute of Technology, Harbin 150001, China;
    3 The 18th Research Institute of China Electronics Technology Group Corporation, Tianjin 300381, China
  • Received:2017-03-04 Revised:2017-04-21 Online:2017-08-05 Published:2017-08-05
  • Contact: Yi-Yong Wu E-mail:wuyiyong@hit.edu.cn
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 11475049).

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摘要：

In this work the degradation effects of the Ga0.7In0.3As (1.0 eV) and Ga0.42In0.58As (0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence (PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction (SJ) GaAs (1.41 eV) solar cell, the electrical properties (such as Isc, Voc, and Pmax) of the newly sub-cells degrade similarly as a function of Φ, where Φ represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga0.42In0.58As (0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga0.7In0.3As (1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga0.7In0.3As (1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time (τeff) in the SJ Ga0.7In0.3As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus, the output current of Ga0.7In0.3As sub-cell should be controlled in the irradiated IMM4J cells.

关键词: IMM4J, Ga0.7In0.3As (1.0 eV), Ga0.42In0.58As (0.7 eV), electrical properties

Abstract:

In this work the degradation effects of the Ga0.7In0.3As (1.0 eV) and Ga0.42In0.58As (0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence (PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction (SJ) GaAs (1.41 eV) solar cell, the electrical properties (such as Isc, Voc, and Pmax) of the newly sub-cells degrade similarly as a function of Φ, where Φ represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga0.42In0.58As (0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga0.7In0.3As (1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga0.7In0.3As (1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time (τeff) in the SJ Ga0.7In0.3As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus, the output current of Ga0.7In0.3As sub-cell should be controlled in the irradiated IMM4J cells.

Key words: IMM4J, Ga0.7In0.3As (1.0 eV), Ga0.42In0.58As (0.7 eV), electrical properties

中图分类号:  (Multijunction solar cells)

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