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Ren-Jie Liu(刘仁杰), Jia-Jie Lin(林家杰), Zheng-Hao Shen(沈正皓), Jia-Liang Sun(孙嘉良), Tian-Gui You(游天桂), Jin Li(李进), Min Liao(廖敏), and Yi-Chun Zhou(周益春). Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique[J]. 中国物理B, 2022, 31(7): 76103-076103. |
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Xiao Li(李骁), Liang-Liang Wang(王亮亮), Jia-shun Zhang(张家顺), Wei Chen(陈巍), Yue Wang(王玥), Dan Wu (吴丹), and Jun-Ming An (安俊明). Quantum key distribution transmitter chip based on hybrid-integration of silica and lithium niobates[J]. 中国物理B, 2022, 31(6): 64212-064212. |
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Feng Xiao(肖峰), Qin Han(韩勤), Han Ye(叶焓), Shuai Wang(王帅), Zi-Qing Lu(陆子晴), and Fan Xiao(肖帆). Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier[J]. 中国物理B, 2022, 31(4): 48101-048101. |
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Shao-Yang Li(李绍洋), Liang-Liang Wang(王亮亮), Dan Wu(吴丹), Jin You(游金), Yue Wang(王玥), Jia-Shun Zhang(张家顺), Xiao-Jie Yin(尹小杰), Jun-Ming An(安俊明), and Yuan-Da Wu(吴远大). High efficiency, small size, and large bandwidth vertical interlayer waveguide coupler[J]. 中国物理B, 2022, 31(2): 24203-024203. |
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Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智). Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology[J]. 中国物理B, 2022, 31(1): 18502-018502. |
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Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳), Qi Liu(刘琦), and Ming Liu(刘明). Resistive switching memory for high density storage and computing[J]. 中国物理B, 2021, 30(5): 58702-058702. |
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王玉冰, 尹伟红, 韩勤, 杨晓红, 叶焓, 吕倩倩, 尹冬冬. Bolometric effect in a waveguide-integrated graphene photodetector[J]. 中国物理B, 2016, 25(11): 118103-118103. |
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