中国物理B ›› 2000, Vol. 9 ›› Issue (7): 545-549.doi: 10.1088/1009-1963/9/7/015

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CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

时东霞1, 张秀芳1, 袁磊1, 顾有松2, 常香荣2, 田中卓2, 张永平3   

  1. (1)Beijing Laboratory of Vacuum Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China; (3)Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China; Beijing Laboratory of Vacuum Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:1999-12-21 修回日期:2000-03-21 出版日期:2000-07-15 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China(Grant No. 19674009 and Beijing Laboratory of Vacuum Physics, Chinese Academy of Sciences.

CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

Zhang Yong-ping (张永平)ab, Gu You-song (顾有松)a, Chang Xiang-rong (常香荣)a, Tian Zhong-zhuo (田中卓)a, Shi Dong-xia (时东霞)b, Zhang Xiu-fang (张秀芳)b, Yuan Lei (袁磊)b   

  1. a Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China; b Beijing Laboratory of Vacuum Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:1999-12-21 Revised:2000-03-21 Online:2000-07-15 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China(Grant No. 19674009 and Beijing Laboratory of Vacuum Physics, Chinese Academy of Sciences.

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摘要： The crystalline carbon nitride thin films have been prepared on Si (100) substrates using microwave plasma chemical vapor deposition technique. The experimental X-ray diffraction pattern of the films prepared contain all the strong peaks of α-C3N4 and β-C3N4, but most of the peaks are overlapped.The films are composed of α-C3N4 and β-C3N4. The N/C atomic ratio is close to the stoichiometric value 1.33. X-ray photoelectron spectroscopic analysis indicated that the binding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively. The shifts are attributed to the polarization of C-N bond. Both observed Raman and Fourier transform infrared spectra were compared with the theoretical calculations. The results support the existence of C-N covalent bond in α- and β-C3N4 mixture.

Abstract: The crystalline carbon nitride thin films have been prepared on Si (100) substrates using microwave plasma chemical vapor deposition technique. The experimental X-ray diffraction pattern of the films prepared contain all the strong peaks of $\alpha$-C3N4 and $\beta$-C3N4, but most of the peaks are overlapped.The films are composed of $\alpha$-C3N4 and $\beta$-C3N4. The N/C atomic ratio is close to the stoichiometric value 1.33. X-ray photoelectron spectroscopic analysis indicated that the binding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively. The shifts are attributed to the polarization of C-N bond. Both observed Raman and Fourier transform infrared spectra were compared with the theoretical calculations. The results support the existence of C-N covalent bond in $\alpha$- and $\beta$-C3N4 mixture.

Key words: carbon nitride, microwave plasma chemical vapor deposition (MPCVD), thin film

中图分类号:  (Plasma-based ion implantation and deposition)

  • 52.77.Dq
78.30.Hv (Other nonmetallic inorganics) 78.66.Nk (Insulators) 79.60.Dp (Adsorbed layers and thin films) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))